Datasheet > M29W640FB

M29W640FB

更新时间： 2024-09-28 05:11:03

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存
页数	文件大小	规格书
71页	1409K
描述
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory

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数据手册

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M29W640FB 数据手册

M29W640FT

M29W640FB

64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block)

3V Supply Flash Memory

Feature summary

■ Supply voltage

– V = 2.7V to 3.6V for Program, Erase,

Read

– V =12 V for Fast Program (optional)

■ Asynchronous Random/Page Read

– Page Width: 4 Words

– Page Access: 25ns

– Random Access: 60ns, 70ns

TSOP48 (N)

12 x 20mm

■ Programming time

– 10µs per Byte/Word typical

– 4 Words / 8 Bytes Program

■ 135 Memory Blocks

FBGA

– 1 Boot Block and 7 Parameter Blocks,

8 KBytes each (Top or Bottom location)

– 127 Main Blocks, 64 KBytes each

TFBGA48 (ZA)

6x8mm

■ Program/Erase Controller

– Embedded Byte/Word Program algorithms

■ Program/Erase Suspend and Resume

– Read from any Block during Program

Suspend

– Read and Program another Block during

Erase Suspend

■ Extended Memory Block

■ Extra block used as security block or to store

additional information

■ Low power consumption

■ Unlock Bypass Program command

– Standby and Automatic Standby

– Faster Production/Batch Programming

■ 100,000 Program/Erase cycles per block

■ V /WP pin for Fast Program and Write Protect

■ Electronic Signature

■ Temporary Block Unprotection mode

– Manufacturer Code: 0020h

■ Common Flash Interface

■ ECOPACK packages

– 64-bit Security Code

Table 1.

Device Codes

Root Part Number

Device Code

M29W640FT

M29W640FB

22EDh

22FDh

December 2007

Rev 7

1/71

www.numonyx.com

12 3 4 5 6 7...71

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