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M29W640DT90ZA6E

更新时间： 2024-02-28 07:00:10

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
49页	943K
描述
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

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M29W640DT90ZA6E 数据手册

M29W640DT

M29W640DB

64 Mbit (8Mb x8 or 4Mb x16, Boot Block)

3V Supply Flash Memory

FEATURES SUMMARY

■

SUPPLY VOLTAGE

Figure 1. Packages

–

V_CC= 2.7V to 3.6V for Program, Erase,

Read

–

V_PP=12 V for Fast Program (optional)

■

ACCESS TIME: 90 ns

PROGRAMMING TIME

–

10 µs per Byte/Word typical

Double Word Programming Option

■

135 MEMORY BLOCKS

–

1 Boot Block and 7 Parameter Blocks,

8 KBytes each (Top or Bottom Location)

127 Main Blocks, 64 KBytes each

TSOP48 (N)

12 x 20mm

–

■

PROGRAM/ERASE CONTROLLER

–

Embedded Byte/Word Program

algorithms

FBGA

ERASE SUSPEND and RESUME MODES

–

Read and Program another Block during

Erase Suspend

TFBGA63 (ZA)

63 ball array

UNLOCK BYPASS PROGRAM COMMAND

Faster Production/Batch Programming

–

■

V_PP/WP Pin for FAST PROGRAM and WRITE

PROTECT

TEMPORARY BLOCK UNPROTECTION

MODE

COMMON FLASH INTERFACE

–

64-bit Security Code

■

EXTENDED MEMORY BLOCK

–

Extra block used as security block or to

store additional information

LOW POWER CONSUMPTION

Standby and Automatic Standby

–

■

100,000 PROGRAM/ERASE CYCLES per

BLOCK

ELECTRONIC SIGNATURE

–

Manufacturer Code: 0020h

Top Device Code M29W640DT: 22DEh

Bottom Device Code M29W640DB:

22DFh

December 2004

1/49

12 3 4 5 6 7...49

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型号	品牌	获取价格	描述	数据表
M29W640DT90ZA6F	STMICROELECTRONICS	获取价格	64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
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M29W640DT90ZA6T	NUMONYX	获取价格	Flash, 4MX16, 90ns, PBGA63, 7 X 11 MM, 0.80 MM PITCH, TFBGA-63
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M29W640FB60N6F	STMICROELECTRONICS	获取价格	64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory
M29W640FB60N6F	NUMONYX	获取价格	64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory
M29W640FB60ZA6E	NUMONYX	获取价格	64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory