5秒后页面跳转
M29W640DT70N6T PDF预览

M29W640DT70N6T

更新时间: 2024-02-16 18:48:41
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
49页 943K
描述
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

M29W640DT70N6T 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:12 X 20 MM, PLASTIC, TSOP-48
针数:48Reach Compliance Code:not_compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.43Is Samacsys:N
最长访问时间:70 ns其他特性:TOP BOOT BLOCK
备用内存宽度:8启动块:TOP
命令用户界面:YES通用闪存接口:YES
数据轮询:YESJESD-30 代码:R-PDSO-G48
JESD-609代码:e0长度:18.4 mm
内存密度:67108864 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:8,127端子数量:48
字数:4194304 words字数代码:4000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:4MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP48,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3.3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:8K,64K最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE宽度:12 mm
Base Number Matches:1

M29W640DT70N6T 数据手册

 浏览型号M29W640DT70N6T的Datasheet PDF文件第2页浏览型号M29W640DT70N6T的Datasheet PDF文件第3页浏览型号M29W640DT70N6T的Datasheet PDF文件第4页浏览型号M29W640DT70N6T的Datasheet PDF文件第5页浏览型号M29W640DT70N6T的Datasheet PDF文件第6页浏览型号M29W640DT70N6T的Datasheet PDF文件第7页 
M29W640DT  
M29W640DB  
64 Mbit (8Mb x8 or 4Mb x16, Boot Block)  
3V Supply Flash Memory  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
VCC = 2.7V to 3.6V for Program, Erase,  
Read  
VPP =12 V for Fast Program (optional)  
ACCESS TIME: 90 ns  
PROGRAMMING TIME  
10 µs per Byte/Word typical  
Double Word Programming Option  
135 MEMORY BLOCKS  
1 Boot Block and 7 Parameter Blocks,  
8 KBytes each (Top or Bottom Location)  
127 Main Blocks, 64 KBytes each  
TSOP48 (N)  
12 x 20mm  
PROGRAM/ERASE CONTROLLER  
Embedded Byte/Word Program  
algorithms  
FBGA  
ERASE SUSPEND and RESUME MODES  
Read and Program another Block during  
Erase Suspend  
TFBGA63 (ZA)  
63 ball array  
UNLOCK BYPASS PROGRAM COMMAND  
Faster Production/Batch Programming  
VPP/WP Pin for FAST PROGRAM and WRITE  
PROTECT  
TEMPORARY BLOCK UNPROTECTION  
MODE  
COMMON FLASH INTERFACE  
64-bit Security Code  
EXTENDED MEMORY BLOCK  
Extra block used as security block or to  
store additional information  
LOW POWER CONSUMPTION  
Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
Manufacturer Code: 0020h  
Top Device Code M29W640DT: 22DEh  
Bottom Device Code M29W640DB:  
22DFh  
December 2004  
1/49  

与M29W640DT70N6T相关器件

型号 品牌 获取价格 描述 数据表
M29W640DT70ZA1E STMICROELECTRONICS

获取价格

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
M29W640DT70ZA1F STMICROELECTRONICS

获取价格

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
M29W640DT70ZA1T STMICROELECTRONICS

获取价格

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
M29W640DT70ZA6E STMICROELECTRONICS

获取价格

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
M29W640DT70ZA6F STMICROELECTRONICS

获取价格

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
M29W640DT70ZA6T STMICROELECTRONICS

获取价格

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
M29W640DT90N1 NUMONYX

获取价格

Flash, 4MX16, 90ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
M29W640DT90N1E NUMONYX

获取价格

Flash, 4MX16, 90ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
M29W640DT90N1E STMICROELECTRONICS

获取价格

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
M29W640DT90N1F STMICROELECTRONICS

获取价格

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory