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M29W640DT70N1F PDF预览

M29W640DT70N1F

更新时间: 2024-02-28 02:57:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路光电二极管ISM频段
页数 文件大小 规格书
49页 943K
描述
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

M29W640DT70N1F 技术参数

生命周期:Obsolete零件包装代码:TSOP
包装说明:12 X 20 MM, PLASTIC, TSOP-48针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.13
Is Samacsys:N最长访问时间:70 ns
其他特性:TOP BOOT BLOCK备用内存宽度:8
启动块:TOPJESD-30 代码:R-PDSO-G48
长度:18.4 mm内存密度:67108864 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1端子数量:48
字数:4194304 words字数代码:4000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:4MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL编程电压:3 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL类型:NOR TYPE
宽度:12 mmBase Number Matches:1

M29W640DT70N1F 数据手册

 浏览型号M29W640DT70N1F的Datasheet PDF文件第2页浏览型号M29W640DT70N1F的Datasheet PDF文件第3页浏览型号M29W640DT70N1F的Datasheet PDF文件第4页浏览型号M29W640DT70N1F的Datasheet PDF文件第5页浏览型号M29W640DT70N1F的Datasheet PDF文件第6页浏览型号M29W640DT70N1F的Datasheet PDF文件第7页 
M29W640DT  
M29W640DB  
64 Mbit (8Mb x8 or 4Mb x16, Boot Block)  
3V Supply Flash Memory  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
VCC = 2.7V to 3.6V for Program, Erase,  
Read  
VPP =12 V for Fast Program (optional)  
ACCESS TIME: 90 ns  
PROGRAMMING TIME  
10 µs per Byte/Word typical  
Double Word Programming Option  
135 MEMORY BLOCKS  
1 Boot Block and 7 Parameter Blocks,  
8 KBytes each (Top or Bottom Location)  
127 Main Blocks, 64 KBytes each  
TSOP48 (N)  
12 x 20mm  
PROGRAM/ERASE CONTROLLER  
Embedded Byte/Word Program  
algorithms  
FBGA  
ERASE SUSPEND and RESUME MODES  
Read and Program another Block during  
Erase Suspend  
TFBGA63 (ZA)  
63 ball array  
UNLOCK BYPASS PROGRAM COMMAND  
Faster Production/Batch Programming  
VPP/WP Pin for FAST PROGRAM and WRITE  
PROTECT  
TEMPORARY BLOCK UNPROTECTION  
MODE  
COMMON FLASH INTERFACE  
64-bit Security Code  
EXTENDED MEMORY BLOCK  
Extra block used as security block or to  
store additional information  
LOW POWER CONSUMPTION  
Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
Manufacturer Code: 0020h  
Top Device Code M29W640DT: 22DEh  
Bottom Device Code M29W640DB:  
22DFh  
December 2004  
1/49  

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