5秒后页面跳转
M29W400DB55ZE6F PDF预览

M29W400DB55ZE6F

更新时间: 2024-11-10 15:18:23
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
49页 1013K
描述
4Mb (512Kb x8 or 256Kb x16), 3V, Boot Block, Parallel NOR Flash Memory

M29W400DB55ZE6F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA, BGA48,6X8,32针数:48
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.42
Is Samacsys:N最长访问时间:55 ns
其他特性:BOTTOM BOOT BLOCK备用内存宽度:8
启动块:BOTTOM命令用户界面:YES
数据轮询:YESJESD-30 代码:R-PBGA-B48
JESD-609代码:e1长度:8 mm
内存密度:4194304 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:1,2,1,7端子数量:48
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256KX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA48,6X8,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/3.3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:16K,8K,32K,64K最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE宽度:6 mm
Base Number Matches:1

M29W400DB55ZE6F 数据手册

 浏览型号M29W400DB55ZE6F的Datasheet PDF文件第2页浏览型号M29W400DB55ZE6F的Datasheet PDF文件第3页浏览型号M29W400DB55ZE6F的Datasheet PDF文件第4页浏览型号M29W400DB55ZE6F的Datasheet PDF文件第5页浏览型号M29W400DB55ZE6F的Datasheet PDF文件第6页浏览型号M29W400DB55ZE6F的Datasheet PDF文件第7页 
M29W400DT  
M29W400DB  
4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block)  
3 V supply Flash memory  
Features  
„ Supply voltage  
– VCC = 2.7 V to 3.6 V for Program, Erase  
and Read  
SO44 (M)(1)  
„ Access time: 45, 55, 70 ns  
„ Programming time  
– 10 μs per byte/word typical  
„ 11 memory blocks  
– 1 boot block (top or bottom location)  
– 2 parameter and 8 main blocks  
TSOP48 (N)  
12 x 20 mm  
„ Program/Erase controller  
FBGA  
– Embedded byte/word program algorithms  
„ Erase Suspend and Resume modes  
– Read and Program another block during  
Erase Suspend  
TFBGA48 (ZA)(1)  
6 x 9 mm  
„ Unlock bypass program command  
– Faster production/batch programming  
FBGA  
„ Temporary block unprotection mode  
„ Low power consumption  
– Standby and Automatic Standby  
TFBGA48 (ZE)  
6 x 8 mm  
„ 100,000 Program/Erase cycles per block  
„ Electronic signature  
– Manufacturer code: 0020h  
Top device code M29W400DT: 00EEh  
– Bottom device code M29W400DB: 00EFh  
– RoHS packages  
1. These packages are no more in mass production.  
„ Automotive Device Grade 3  
Temperature: –40 to 125 °C  
– Automotive grade certified  
January 2018  
Rev 9  
1/48  
www.numonyx.com  
1

M29W400DB55ZE6F 替代型号

型号 品牌 替代类型 描述 数据表
M29W400DB55ZE6E MICRON

类似代替

4Mb (512Kb x8 or 256Kb x16), 3V, Boot Block, Parallel NOR Flash Memory
SST39LF401C-55-4C-B3KE MICROCHIP

功能相似

256K X 16 FLASH 2.7V PROM, 55 ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, MO-210A

与M29W400DB55ZE6F相关器件

型号 品牌 获取价格 描述 数据表
M29W400DB55ZE6T STMICROELECTRONICS

获取价格

4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory
M29W400DB55ZE6T NUMONYX

获取价格

4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory
M29W400DB70M1 STMICROELECTRONICS

获取价格

4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory
M29W400DB70M1 NUMONYX

获取价格

4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory
M29W400DB70M1E STMICROELECTRONICS

获取价格

4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory
M29W400DB70M1E NUMONYX

获取价格

4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory
M29W400DB70M1F STMICROELECTRONICS

获取价格

4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory
M29W400DB70M1F NUMONYX

获取价格

4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory
M29W400DB70M1T NUMONYX

获取价格

4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory
M29W400DB70M1T STMICROELECTRONICS

获取价格

4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory