Datasheet > M29W400DB55N3T

M29W400DB55N3T

更新时间： 2024-09-17 04:52:11

品牌	Logo	应用领域
恒忆 - NUMONYX		光电二极管
页数	文件大小	规格书
48页	1012K
描述
Flash, 256KX16, 55ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

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数据手册

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M29W400DB55N3T 数据手册

M29W400DT

M29W400DB

4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block)

3 V supply Flash memory

Features

Supply voltage

– V_CC= 2.7 V to 3.6 V for Program, Erase

and Read

SO44 (M)⁽¹⁾

Access time: 45, 55, 70 ns

Programming time

– 10 μs per byte/word typical

11 memory blocks

– 1 boot block (top or bottom location)

– 2 parameter and 8 main blocks

TSOP48 (N)

12 x 20 mm

Program/Erase controller

FBGA

– Embedded byte/word program algorithms

Erase Suspend and Resume modes

– Read and Program another block during

Erase Suspend

TFBGA48 (ZA)⁽¹⁾

6 x 9 mm

Unlock bypass program command

– Faster production/batch programming

FBGA

Temporary block unprotection mode

Low power consumption

– Standby and Automatic Standby

TFBGA48 (ZE)

6 x 8 mm

100,000 Program/Erase cycles per block

Electronic signature

– Manufacturer code: 0020h

– Top device code M29W400DT: 00EEh

– Bottom device code M29W400DB: 00EFh

– RoHS packages

1. These packages are no more in mass production.

Automotive Device Grade 3

– Temperature: –40 to 125 °C

– Automotive grade certified

April 2009

Rev 8

1/48

www.numonyx.com

12 3 4 5 6 7...48

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