5秒后页面跳转
M29W400DB55M1 PDF预览

M29W400DB55M1

更新时间: 2024-11-06 05:27:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存内存集成电路光电二极管
页数 文件大小 规格书
38页 280K
描述
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory

M29W400DB55M1 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOIC包装说明:0.525 INCH, PLASTIC, SOP-44
针数:44Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.23最长访问时间:55 ns
其他特性:BOTTOM BOOT BLOCK备用内存宽度:8
启动块:BOTTOM命令用户界面:YES
数据轮询:YESJESD-30 代码:R-PDSO-G44
JESD-609代码:e0长度:28.2 mm
内存密度:4194304 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:1,2,1,7端子数量:44
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256KX16
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP44,.63封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/3.3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:2.8 mm
部门规模:16K,8K,32K,64K最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:TIN LEAD端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE宽度:13.3 mm
Base Number Matches:1

M29W400DB55M1 数据手册

 浏览型号M29W400DB55M1的Datasheet PDF文件第2页浏览型号M29W400DB55M1的Datasheet PDF文件第3页浏览型号M29W400DB55M1的Datasheet PDF文件第4页浏览型号M29W400DB55M1的Datasheet PDF文件第5页浏览型号M29W400DB55M1的Datasheet PDF文件第6页浏览型号M29W400DB55M1的Datasheet PDF文件第7页 
M29W400DT  
M29W400DB  
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)  
3V Supply Flash Memory  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
VCC = 2.7V to 3.6V for Program, Erase  
and Read  
Figure 1. Packages  
ACCESS TIME: 45, 55, 70ns  
PROGRAMMING TIME  
10µs per Byte/Word typical  
11 MEMORY BLOCKS  
1 Boot Block (Top or Bottom Location)  
2 Parameter and 8 Main Blocks  
SO44 (M)  
PROGRAM/ERASE CONTROLLER  
Embedded Byte/Word Program  
algorithms  
ERASE SUSPEND and RESUME MODES  
Read and Program another Block during  
Erase Suspend  
UNLOCK BYPASS PROGRAM COMMAND  
Faster Production/Batch Programming  
TSOP48 (N)  
12 x 20mm  
TEMPORARY BLOCK UNPROTECTION  
MODE  
LOW POWER CONSUMPTION  
Standby and Automatic Standby  
FBGA  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
Manufacturer Code: 0020h  
Top Device Code M29W400DT: 00EEh  
Bottom Device Code M29W400D: 00EFh  
TFBGA48 (ZA)  
6 x 9mm  
PACKAGES  
Compliant with Lead-Free Soldering  
Processes  
FBGA  
Lead-Free Versions  
TFBGA48 (ZE)  
6 x 8mm  
June 2004  
1/38  
 
 

与M29W400DB55M1相关器件

型号 品牌 获取价格 描述 数据表
M29W400DB55M1E NUMONYX

获取价格

4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory
M29W400DB55M1E STMICROELECTRONICS

获取价格

4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory
M29W400DB55M1F STMICROELECTRONICS

获取价格

4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory
M29W400DB55M1F NUMONYX

获取价格

4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory
M29W400DB55M1T STMICROELECTRONICS

获取价格

4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory
M29W400DB55M1T NUMONYX

获取价格

4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory
M29W400DB55M6 STMICROELECTRONICS

获取价格

4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory
M29W400DB55M6 NUMONYX

获取价格

4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory
M29W400DB55M6E NUMONYX

获取价格

4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory
M29W400DB55M6E STMICROELECTRONICS

获取价格

4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory