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M29W400DB45ZE1E

更新时间： 2024-09-15 05:27:27

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存
页数	文件大小	规格书
48页	1025K
描述
4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory

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数据手册

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M29W400DB45ZE1E 数据手册

M29W400DT

M29W400DB

4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block)

3 V supply Flash memory

Features

■ Supply voltage

– V = 2.7 V to 3.6 V for Program, Erase

and Read

(1)

SO44 (M)

■ Access time: 45, 55, 70 ns

■ Programming time

– 10 µs per byte/word typical

■ 11 memory blocks

– 1 boot block (top or bottom location)

– 2 parameter and 8 main blocks

TSOP48 (N)

12 x 20 mm

■ Program/Erase controller

FBGA

– Embedded byte/word program algorithms

■ Erase Suspend and Resume modes

– Read and Program another block during

Erase Suspend

(1)

TFBGA48 (ZA)

6 x 9 mm

■ Unlock bypass program command

– Faster production/batch programming

FBGA

■ Temporary block unprotection mode

■ Low power consumption

– Standby and Automatic Standby

TFBGA48 (ZE)

6 x 8 mm

■ 100,000 Program/Erase cycles per block

■ Electronic signature

– Manufacturer code: 0020h

1. These packages are no more in mass production.

– Top device code M29W400DT: 00EEh

– Bottom device code M29W400DB: 00EFh

– ECOPACK packages

December 2007

Rev 6

1/48

www.numonyx.com

12 3 4 5 6 7...48

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