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M29W400DB45ZA1T

更新时间： 2024-11-04 22:15:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存内存集成电路
页数	文件大小	规格书
36页	328K
描述
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory

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M29W400DB45ZA1T 数据手册

M29W400DT

M29W400DB

4 Mbit (512Kb x8 or 256Kb x16, Boot Block)

3V Supply Flash Memory

PRELIMINARY DATA

FEATURES SUMMARY

■ SUPPLY VOLTAGE

Figure 1. Packages

– V = 2.7V to 3.6V for Program, Erase and

Read

■ ACCESS TIME: 45, 55, 70ns

■ PROGRAMMING TIME

– 10µs per Byte/Word typical

■ 11 MEMORY BLOCKS

SO44 (M)

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 8 Main Blocks

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte/Word Program algorithms

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

TSOP48 (N)

12 x 20mm

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

FBGA

■ TEMPORARY BLOCK UNPROTECTION

MODE

■ LOW POWER CONSUMPTION

TFBGA48 (ZA)

6 x 9mm

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Top Device Code M29W400DT: 00EEh

– Bottom Device Code M29W400DB: 00EFh

February 2003

1/36

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

12 3 4 5 6 7...36

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