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M29W400BB120ZA6T PDF预览

M29W400BB120ZA6T

更新时间: 2024-01-21 07:17:53
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
25页 241K
描述
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory

M29W400BB120ZA6T 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:BGA包装说明:6 X 8 MM, 0.80 MM PITCH, TFBGA-48
针数:48Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.48最长访问时间:120 ns
其他特性:BOTTOM BOOT BLOCK备用内存宽度:8
启动块:BOTTOM命令用户界面:YES
数据轮询:YES耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PBGA-B48JESD-609代码:e1
长度:9 mm内存密度:4194304 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:1,2,1,7
端子数量:48字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX16封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA48,6X8,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3/3.3 V编程电压:2.7 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:16K,8K,32K,64K
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.02 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:YES类型:NOR TYPE
宽度:6 mmBase Number Matches:1

M29W400BB120ZA6T 数据手册

 浏览型号M29W400BB120ZA6T的Datasheet PDF文件第2页浏览型号M29W400BB120ZA6T的Datasheet PDF文件第3页浏览型号M29W400BB120ZA6T的Datasheet PDF文件第4页浏览型号M29W400BB120ZA6T的Datasheet PDF文件第5页浏览型号M29W400BB120ZA6T的Datasheet PDF文件第6页浏览型号M29W400BB120ZA6T的Datasheet PDF文件第7页 
M29W400BT  
M29W400BB  
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)  
Low Voltage Single Supply Flash Memory  
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 55ns  
FBGA  
PROGRAMMING TIME  
– 10µs per Byte/Word typical  
11 MEMORY BLOCKS  
TSOP48 (N)  
12 x 20mm  
TFBGA48 (ZA)  
6 x 8 ball array  
– 1 Boot Block (Top or Bottom Location)  
– 2 Parameter and 8 Main Blocks  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte/Word Program algorithm  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
– Ready/Busy Output Pin  
44  
1
ERASE SUSPEND and RESUME MODES  
SO44 (M)  
– Read and Program another Block during  
Erase Suspend  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
Figure 1. Logic Diagram  
TEMPORARY BLOCK UNPROTECTION  
MODE  
V
CC  
LOW POWER CONSUMPTION  
– Standby and Automatic Standby  
18  
15  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
A0-A17  
DQ0-DQ14  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
W
E
DQ15A–1  
BYTE  
RB  
M29W400BT  
M29W400BB  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
G
– Top Device Code M29W400BT: 00EEh  
– Bottom Device Code M29W400BB: 00EFh  
RP  
V
SS  
AI02934  
June 2001  
1/25  

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