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M29W400B-90N6RTR PDF预览

M29W400B-90N6RTR

更新时间: 2024-09-28 13:01:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
34页 246K
描述
IC,EEPROM,NOR FLASH,256KX16/512KX8,CMOS,TSSOP,48PIN,PLASTIC

M29W400B-90N6RTR 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:not_compliant风险等级:5.92
最长访问时间:90 ns备用内存宽度:8
启动块:BOTTOM命令用户界面:YES
数据轮询:YES耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G48JESD-609代码:e0
内存密度:4194304 bit内存集成电路类型:FLASH
内存宽度:16部门数/规模:1,2,1,7
端子数量:48字数:262144 words
字数代码:256000最高工作温度:85 °C
最低工作温度:-40 °C组织:256KX16
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP48,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:PARALLEL
电源:3/3.3 V认证状态:Not Qualified
就绪/忙碌:YES反向引出线:YES
部门规模:16K,8K,32K,64K最大待机电流:0.00005 A
子类别:Flash Memories最大压摆率:0.02 mA
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL切换位:YES
类型:NOR TYPEBase Number Matches:1

M29W400B-90N6RTR 数据手册

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M29W400T  
M29W400B  
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)  
Low Voltage Single Supply Flash Memory  
NOT FOR NEW DESIGN  
M29W400T and M29W400Bare replaced  
respectivelyby the M29W400BT and  
M29W400BB  
2.7V to 3.6V SUPPLY VOLTAGE for  
44  
PROGRAM, ERASE and READ OPERATIONS  
FAST ACCESS TIME: 90ns  
FAST PROGRAMMING TIME  
1
TSOP48 (N)  
12 x 20 mm  
SO44 (M)  
– 10µs by Byte / 16µs by Word typical  
PROGRAM/ERASE CONTROLLER (P/E.C.)  
– Program Byte-by-Byte or Word-by-Word  
– Status Register bits and Ready/BusyOutput  
MEMORY BLOCKS  
BGA  
– Boot Block (Top or Bottom location)  
– Parameter and Main blocks  
BLOCK, MULTI-BLOCK and CHIP ERASE  
FBGA48 (ZA)  
8 x 6 solder balls  
MULTI BLOCK PROTECTION/TEMPORARY  
UNPROTECTION MODES  
ERASE SUSPEND and RESUME MODES  
– Read and Programanother Block during  
Erase Suspend  
Figure 1. Logic Diagram  
LOW POWER CONSUMPTION  
– Stand-by and AutomaticStand-by  
100,000PROGRAM/ERASE CYCLES per  
BLOCK  
V
CC  
20 YEARS DATA RETENTION  
– Defectivity below 1ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
– Device Code, M29W400T: 00EEh  
– Device Code, M29W400B: 00EFh  
18  
15  
A0-A17  
DQ0-DQ14  
W
E
DQ15A–1  
BYTE  
RB  
M29W400T  
M29W400B  
DESCRIPTION  
G
The M29W400 is a non-volatile memory that may  
be erasedelectrically at theblock or chip level and  
programmedin-systemon a Byte-by-ByteorWord-  
by-Wordbasisusing onlya single2.7Vto 3.6VVCC  
supply. For Program and Erase operations the  
necessary high voltages are generated internally.  
The device can also be programmed in standard  
programmers.  
RP  
V
SS  
AI02065  
The array matrix organisationallows each block to  
be erased and reprogrammed without affecting  
other blocks. Blocks can be protected againstpro-  
graming and erase on programming equipment,  
November 1999  
1/34  
This is informationon a product still in productionbut not recommendedfor new designs.  

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