Datasheet > M29W320EB70ZS6F

M29W320EB70ZS6F

更新时间： 2024-09-14 15:18:11

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
65页	1335K
描述
Rev. 9

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中文翻译

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数据手册

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M29W320EB70ZS6F 数据手册

M29W320ET

M29W320EB

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block)

3V supply Flash memory

Features

Supply voltage

– V_CC= 2.7V to 3.6V for Program, Erase and

Read

– V_PP=12V for Fast Program (optional)

Access times: 70, 90ns

Programming time

TSOP48 (N)

12 x 20 mm

– 10μs per byte/word typical

– Double word/ Quadruple byte Program

BGA

FBGA

Memory Blocks

– Memory Array: 63 Main Blocks

– 8 Parameter Blocks (Top or Bottom

Location)

TFBGA48 (ZE)

6 x 8 mm

FBGA64 (ZS)

11 x 13 mm

Erase Suspend and Resume modes

– Read and Program another Block during

Erase Suspend

Unlock Bypass Program command

– Faster Production/Batch Programming

V_PP/WP pin for fast Program and Write Protect

Temporary Block Unprotection mode

Common Flash Interface

– 64 bit Security code

Extended memory Block

– Extra block used as security block or to

store additional information

Low power consumption

– Standby and Automatic Standby

100,000 Program/Erase cycles per block

Electronic signature

– Manufacturer code: 0020h

– Top Device code M29W320ET: 2256h

– Bottom Device code M29W320EB: 2257h

RoHS^®packages available

May 2009

Rev 9

1/65

www.numonyx.com

12 3 4 5 6 7...65

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