Datasheet > M29W320DT70ZE3E

M29W320DT70ZE3E

更新时间： 2024-11-10 04:15:19

品牌	Logo	应用领域
恒忆 - NUMONYX		/
页数	文件大小	规格书
56页	1126K
描述
Flash, 2MX16, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-48

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M29W320DT70ZE3E 数据手册

M29W320DT

M29W320DB

32 Mbit (4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks,

Boot Block), 3V Supply Flash memory

Feature summary

Supply Voltage

– V_CC= 2.7V to 3.6V for Program, Erase and

Read

– V_PP=12V for Fast Program (optional)

Access time: 70, 90ns

Programming time

– 10μs per Byte/Word typical

TSOP48 (N)

12 x 20mm

67 memory blocks

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 64 Main Blocks

FBGA

Program/Erase controller

– Embedded Byte/Word Program algorithms

TFBGA48 (ZE)

Erase Suspend and Resume modes

– Read and Program another Block during

Erase Suspend

Unlock Bypass Program command

– Faster Production/Batch Programming

V_PP/WP pin for Fast Program and Write Protect

Temporary Block Unprotection mode

Common Flash Interface

– 64 bit Security code

Low power consumption

– Standby and Automatic Standby

100,000 Program/Erase cycles per block

Electronic Signature

– Manufacturer Code: 0020h

– Top Device Code M29W320DT: 22CAh

– Bottom Device Code M29W320DB: 22CBh

RoHS packages available

Automotive Grade Parts Available

May 2009

Rev 11

1/56

www.numonyx.com

12 3 4 5 6 7...56

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与M29W320DT70ZE3E相关器件

型号	品牌	获取价格	描述	数据表
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M29W320DT70ZE6F	MICRON	获取价格	Rev. 13