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M29W320DB90ZE1T

更新时间： 2024-11-05 22:56:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
46页	853K
描述
32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory

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M29W320DB90ZE1T 数据手册

M29W320DT

M29W320DB

32 Mbit (4Mb x8 or 2Mb x16, Boot Block)

3V Supply Flash Memory

FEATURES SUMMARY

■ SUPPLY VOLTAGE

Figure 1. Packages

– V = 2.7V to 3.6V for Program, Erase and

Read

– V =12V for Fast Program (optional)

■ ACCESS TIME: 70, 90ns

■ PROGRAMMING TIME

– 10µs per Byte/Word typical

TSOP48 (N)

12 x 20mm

■ 67 MEMORY BLOCKS

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 64 Main Blocks

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte/Word Program algorithms

■ ERASE SUSPEND and RESUME MODES

FBGA

TFBGA63 (ZA)

TFBGA48 (ZE)

– Read and Program another Block during

Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ V /WP PIN for FAST PROGRAM and WRITE

PROTECT

■ TEMPORARY BLOCK UNPROTECTION

MODE

■ COMMON FLASH INTERFACE

– 64 bit Security Code

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Top Device Code M29W320DT: 22CAh

– Bottom Device Code M29W320DB: 22CBh

August 2005

1/46

12 3 4 5 6 7...46

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与M29W320DB90ZE1T相关器件

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