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M29W320DB70ZE6F PDF预览

M29W320DB70ZE6F

更新时间: 2024-09-14 15:17:03
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
57页 1024K
描述
Rev. 13

M29W320DB70ZE6F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA, BGA48,6X8,32针数:48
Reach Compliance Code:compliantECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.47
Is Samacsys:N最长访问时间:70 ns
其他特性:BOTTOM BOOT BLOCK备用内存宽度:8
启动块:BOTTOM命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PBGA-B48JESD-609代码:e1
长度:8 mm内存密度:33554432 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:1,2,1,63
端子数量:48字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2MX16封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA48,6X8,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3.3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:16K,8K,32K,64K
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.02 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
切换位:YES类型:NOR TYPE
宽度:6 mmBase Number Matches:1

M29W320DB70ZE6F 数据手册

 浏览型号M29W320DB70ZE6F的Datasheet PDF文件第2页浏览型号M29W320DB70ZE6F的Datasheet PDF文件第3页浏览型号M29W320DB70ZE6F的Datasheet PDF文件第4页浏览型号M29W320DB70ZE6F的Datasheet PDF文件第5页浏览型号M29W320DB70ZE6F的Datasheet PDF文件第6页浏览型号M29W320DB70ZE6F的Datasheet PDF文件第7页 
M29W320DT  
M29W320DB  
32 Mbit (4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks,  
Boot Block), 3V Supply Flash memory  
Feature summary  
„ Supply Voltage  
– V = 2.7V to 3.6V for Program, Erase and  
CC  
Read  
– V =12V for Fast Program (optional)  
PP  
„ Access time: 70, 80, and 90 ns  
„ Programming time  
– 10µs per Byte/Word typical  
TSOP48 (N)  
12 x 20mm  
„ 67 memory blocks  
– 1 Boot Block (Top or Bottom Location)  
– 2 Parameter and 64 Main Blocks  
FBGA  
„ Program/Erase controller  
– Embedded Byte/Word Program algorithms  
TFBGA48 (ZE)  
„ Erase Suspend and Resume modes  
– Read and Program another Block during  
Erase Suspend  
„ Unlock Bypass Program command  
– Faster Production/Batch Programming  
„ V /WP pin for Fast Program and Write Protect  
PP  
„ Temporary Block Unprotection mode  
„ Common Flash Interface  
– 64 bit Security code  
„ Low power consumption  
– Standby and Automatic Standby  
„ 100,000 Program/Erase cycles per block  
„ Electronic Signature  
– Manufacturer Code: 0020h  
Top Device Code M29W320DT: 22CAh  
– Bottom Device Code M29W320DB: 22CBh  
„ RoHS packages available  
„ Automotive Grade Parts Available  
January 2018  
Rev 13  
1/56  
www.numonyx.com  
1

M29W320DB70ZE6F 替代型号

型号 品牌 替代类型 描述 数据表
M29W320ET70ZE6F MICRON

完全替代

Rev. 9
M29W320ET70ZE6E MICRON

完全替代

Rev. 9
M29DW323DB70ZE6E MICRON

完全替代

32Mb (4Mb x8 or 2Mb x16), 3V, Dual Bank 8:24, Boot Block, Parallel NOR Flash Memory

与M29W320DB70ZE6F相关器件

型号 品牌 获取价格 描述 数据表
M29W320DB70ZE6T NUMONYX

获取价格

32 Mbit (4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks, Boot Block), 3V Supply Flash memor
M29W320DB70ZE6T STMICROELECTRONICS

获取价格

32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
M29W320DB7AN6 NUMONYX

获取价格

Flash, 2MX16, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
M29W320DB7AN6E NUMONYX

获取价格

Flash, 2MX16, 70ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
M29W320DB7AN6E MICRON

获取价格

Rev. 13
M29W320DB7AN6F NUMONYX

获取价格

Flash, 2MX16, 70ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
M29W320DB7AN6F MICRON

获取价格

Rev. 13
M29W320DB7AN6T NUMONYX

获取价格

Flash, 2MX16, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
M29W320DB7AZA6 NUMONYX

获取价格

Flash, 2MX16, 70ns, PBGA63, 7 X 11 MM, 0.80 MM PITCH, TFBGA-63
M29W320DB7AZA6E MICRON

获取价格

Rev. 13