Datasheet > M29W256GL7AN6F

M29W256GL7AN6F

更新时间： 2024-01-18 18:35:34

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
76页	992K
描述
256Mb (32Mb x8 or 16Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory

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数据手册

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M29W256GL7AN6F 数据手册

256Mb: 3V Embedded Parallel NOR Flash

Features

Parallel NOR Flash Embedded Memory

M29W256GH, M29W256GL

• V_PP/WP# pin protection

– Protects first or last block regardless of block

Features

• Supply voltage

-protection settings

– V_CC= 2.7–3.6V (program, erase, read)

– V_CCQ= 1.65–3.6V (I/O buffers)

– V_PPH= 12V for fast program (optional)

• Asynchronous random/page read

– Page size: 8 words or 16 bytes

– Page access: 25ns, 30ns

• Software protection

– Volatile protection

– Nonvolatile protection

– Password protection

• Extended memory block

– 128-word (256-byte) memory block for perma-

nent, secure identification

– Programmed or locked at the factory or by the

customer

• Common Flash interface

– 64-bit security code

• Low power consumption: Standby and automatic

mode

• JESD47H-compliant

– 100,000 minimum PROGRAM/ERASE cycles per

block

– Data retention: 20 years (TYP)

• 65nm single-level cell (SLC) process technology

• Fortified BGA, TBGA, and TSOP packages

• "Green" packages available

– RoHS-compliant

– Random access: 60ns¹, 70ns, 80ns

• Fast program commands: 32-word (64-byte) write

buffer

• Enhanced buffered program commands: 256-word

• Program time

– 16µs per byte/word TYP

– Chip program time: 10s with V_PPHand 16s with-

out V_PPH

• Memory organization

– Uniform blocks: 256 main blocks, 128KB, or 64-

Kwords each

• Program/erase controller

– Embedded byte/word program algorithms

• Program/erase suspend and resume capability

– Read from any block during a PROGRAM SUS-

PEND operation

– Read or program another block during an ERASE

SUSPEND operation

– Halogen-free

• Automotive device grade (6) temperature: –40°C to

+85°C (automotive grade-certified)

• Automotive device grade (3) temperature: –40°C to

+125°C (automotive grade-certified)

• Unlock bypass, block erase, chip erase, write to buf-

fer and program

– Fast buffered/batch programming

– Fast block/chip erase

1. The 60ns device is available upon customer

request.

Note:

PDF: 09005aef84bd3b68

m29w_256mb.pdf - Rev. C 7/13 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...76

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与M29W256GL7AN6F相关器件

型号	品牌	获取价格	描述	数据表
M29W256GL7AZA6E	MICRON	获取价格	256Mb (32Mb x8 or 16Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W256GL7AZS6E	MICRON	获取价格	256Mb (32Mb x8 or 16Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W256GL7AZS6F	MICRON	获取价格	256Mb (32Mb x8 or 16Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W256GSH70ZS6E	MICRON	获取价格	256Mb (32Mb x8 or 16Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W256GSH70ZS6F	MICRON	获取价格	256Mb (32Mb x8 or 16Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W256GSL70ZS6E	MICRON	获取价格	256Mb (32Mb x8 or 16Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W256GSL70ZS6F	MICRON	获取价格	256Mb (32Mb x8 or 16Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W320	STMICROELECTRONICS	获取价格	32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
M29W320DB	NUMONYX	获取价格	32 Mbit (4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks, Boot Block), 3V Supply Flash memor
M29W320DB	STMICROELECTRONICS	获取价格	32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory

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