Datasheet > M29W256GL

M29W256GL

更新时间： 2024-02-23 12:01:04

品牌	Logo	应用领域
镁光 - MICRON		闪存存储
页数	文件大小	规格书
89页	1158K
描述
Parallel NOR Flash Embedded Memory

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中文翻译

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数据手册

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M29W256GL 数据手册

256Mb: 3V Embedded Parallel NOR Flash

Features

Parallel NOR Flash Embedded Memory

M29W256GH, M29W256GL

• V_PP/WP# pin protection

– Protects first or last block regardless of block

Features

• Supply voltage

protection settings

– V_CC= 2.7–3.6V (program, erase, read)

– V_CCQ= 1.65–3.6V (I/O buffers)

– V_PPH= 12V for fast program (optional)

• Asynchronous random/page read

– Page size: 8words or 16 bytes

– Page access: 25, 30ns

• Software protection

– Volatile protection

– Nonvolatile protection

– Password protection

• Extended memory block

– 128-word (256-byte) memory block for perma-

nent, secure identification

– Programmed or locked at the factory or by the

customer

• Common flash interface

– 64-bit security code

• Low power consumption: Standby and automatic

mode

• JESD47H-compliant

– 100,000 minimum PROGRAM/ERASE cycles per

block

– Data retention: 20 years (TYP)

• 65nm single-level cell (SLC) process technology

• Fortified BGA, TBGA, and TSOP packages

• Green packages available

– RoHS-compliant

– Halogen-free

– Random access: 60ns¹, 70, 80ns

• Fast program commands: 32-word (64-byte) write

buffer

• Enhanced buffered program commands: 256-word

• Program time

– 16µs per byte/word TYP

– Chip program time: 10s with V_PPHand 16s with-

out V_PPH

• Memory organization

– Uniform blocks: 256 main blocks, 128-Kbytes or

64-Kwords each

• Program/erase controller

– Embedded byte/word program algorithms

• Program/erase suspend and resume capability

– Read from any block during a PROGRAM SUS-

PEND operation

– Read or program another block during an ERASE

SUSPEND operation

• Automotive device grade (6): temperature –40°C to

+85°C (automotive grade certified)

• Automotive device grade (3): temperature –40°C to

+125°C (automotive grade certified)

• Unlock bypass, block erase, chip erase, write to buf-

fer and program

– Fast buffered/batch programming

– Fast block/chip erase

1. The 60ns device is available upon customer

request.

Note:

PDF: 09005aef84bd3b68

m29w_256mb.pdf - Rev. B 5/13 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...89

中文翻译

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与M29W256GL相关器件

型号	品牌	获取价格	描述	数据表
M29W256GL60N1E	NUMONYX	获取价格	暂无描述
M29W256GL70N6E	MICRON	获取价格	256Mb (32Mb x8 or 16Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W256GL70ZA6E	MICRON	获取价格	256Mb (32Mb x8 or 16Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W256GL70ZA6F	NUMONYX	获取价格	Flash, 16MX16, 70ns, PBGA64, 10 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, TBGA-64
M29W256GL70ZA6F	MICRON	获取价格	256Mb (32Mb x8 or 16Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W256GL70ZS6E	MICRON	获取价格	Parallel NOR Flash Embedded Memory
M29W256GL70ZS6F	MICRON	获取价格	256Mb (32Mb x8 or 16Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W256GL7AN6E	MICRON	获取价格	256Mb (32Mb x8 or 16Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W256GL7AN6F	MICRON	获取价格	256Mb (32Mb x8 or 16Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W256GL7AZA6E	MICRON	获取价格	256Mb (32Mb x8 or 16Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory

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