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M29W200BB70M1E PDF预览

M29W200BB70M1E

更新时间: 2024-02-06 02:31:26
品牌 Logo 应用领域
恒忆 - NUMONYX 光电二极管内存集成电路
页数 文件大小 规格书
22页 505K
描述
Flash, 128KX16, 70ns, PDSO44, 0.525 INCH, LEAD FREE, PLASTIC, SOP-44

M29W200BB70M1E 技术参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:0.525 INCH, LEAD FREE, PLASTIC, SOP-44针数:44
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.35
最长访问时间:70 ns备用内存宽度:8
启动块:BOTTOMJESD-30 代码:R-PDSO-G44
JESD-609代码:e3/e4长度:28.2 mm
内存密度:2097152 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
端子数量:44字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:128KX16封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):245编程电压:2.7 V
认证状态:Not Qualified座面最大高度:2.8 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:MATTE TIN/NICKEL PALLADIUM GOLD端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40类型:NOR TYPE
宽度:13.3 mmBase Number Matches:1

M29W200BB70M1E 数据手册

 浏览型号M29W200BB70M1E的Datasheet PDF文件第2页浏览型号M29W200BB70M1E的Datasheet PDF文件第3页浏览型号M29W200BB70M1E的Datasheet PDF文件第4页浏览型号M29W200BB70M1E的Datasheet PDF文件第5页浏览型号M29W200BB70M1E的Datasheet PDF文件第6页浏览型号M29W200BB70M1E的Datasheet PDF文件第7页 
M29W200BT  
M29W200BB  
2 Mbit (256Kb x8 or 128Kb x16, Boot Block)  
Low Voltage Single Supply Flash Memory  
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 55ns  
PROGRAMMING TIME  
– 10µs per Byte/Word typical  
44  
7 MEMORY BLOCKS  
– 1 Boot Block (Top or Bottom Location)  
– 2 Parameter and 4 Main Blocks  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte/Word Program algorithm  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
– Ready/Busy Output Pin  
1
TSOP48 (N)  
12 x 20mm  
SO44 (M)  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
Figure 1. Logic Diagram  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
TEMPORARY BLOCK UNPROTECTION  
V
CC  
MODE  
LOW POWER CONSUMPTION  
17  
15  
– Standby and Automatic Standby  
A0-A16  
DQ0-DQ14  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
W
E
DQ15A–1  
BYTE  
RB  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
M29W200BT  
M29W200BB  
ELECTRONIC SIGNATURE  
G
– Manufacturer Code: 0020h  
RP  
– Top Device Code M29W200BT: 0051h  
– Bottom Device Code: M29W200BB 0057h  
ECOPACK® PACKAGES AVAILABLE  
V
SS  
AI02948  
September 2005  
1/22  

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