Datasheet > M29W160FBB80ZA3E

M29W160FBB80ZA3E

更新时间： 2024-11-02 05:01:07

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存
页数	文件大小	规格书
57页	1070K
描述
16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

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数据手册

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M29W160FBB80ZA3E 数据手册

M29W160FT M29W160FB

M29W320FT M29W320FB

16 Mbit or 32 Mbit (x 8 or x 16, boot block)

3 V supply Flash memory

Features

■ Supply voltage

– V = 2.5 V to 3.6 V (access time: 80 ns) or

2.7 to 3.6 V (access time: 70 ns) for

Program, Erase and Read

– V = 12 V for Fast Program (optional,

TSOP48 (N)

12 x 20 mm

available in the M29W320FT/B only)

■ Access time: 70, 80 ns

■ Programming time

FBGA

– 10 µs per byte/word typical

■ Memory organization:

– M29W160FT/B: 35 blocks including 1 boot

block (top or bottom location), 2 parameter

blocks and 32 main blocks

TFBGA48 (ZA)

6 x 8 mm

– M29W320FT: 67 blocks including 1 boot

block (top or bottom location), 2 parameter

blocks and 64 main blocks

■ Electronic signature

– Manufacturer code: 0020h

– Top device codes

M29W160FT: 22C4h

M29W320FT: 22CAh

– Bottom device codes

M29W160FB: 2249h

M29W320FB: 22CBh

■ Program/Erase controller

– Embedded byte/word program algorithms

■ Erase Suspend and Resume modes

– Read and Program another block during

Erase Suspend

■ Unlock Bypass Program command

■ Automotive device grade 3:

– Temperature: ^–40 to 125 °C

– Automotive grade certified

– Faster production/batch programming

■ V /WP pin for Fast program and Write Protect

(available in the M29W320FT/B only)

■ TSOP48 package is ECOPACK®

■ Temporary block unprotection mode

■ Common Flash interface

– 64 bit security code

■ Low power consumption

– Standby and Automatic Standby

■ 100,000 Program/Erase cycles per block

March 2008

Rev 3

1/57

www.numonyx.com

12 3 4 5 6 7...57

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