Datasheet > M29W160FB80ZA3SF6

M29W160FB80ZA3SF6

更新时间： 2024-11-03 04:44:43

品牌	Logo	应用领域
恒忆 - NUMONYX		/
页数	文件大小	规格书
57页	1144K
描述
Flash, 1MX16, 80ns, PBGA48,

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M29W160FB80ZA3SF6 数据手册

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M29W160FT M29W160FB

M29W320FT M29W320FB

16 Mbit or 32 Mbit (x 8 or x 16, boot block)

3 V supply Flash memory

Features

Supply voltage

– V_CC= 2.5 V to 3.6 V (access time: 80 ns) or

2.7 to 3.6 V (access time: 70 ns) for

Program, Erase and Read

– V_PP= 12 V for Fast Program (optional,

available in the M29W320FT/B only)

TSOP48 (N)

12 x 20 mm

Access time: 70, 80 ns

Programming time

FBGA

– 10 μs per byte/word typical

Memory organization:

– M29W160FT/B: 35 blocks including 1 boot

block (top or bottom location), 2 parameter

blocks and 32 main blocks

TFBGA48 (ZA)

6 x 8 mm

– M29W320FT: 67 blocks including 1 boot

block (top or bottom location), 2 parameter

blocks and 64 main blocks

Electronic signature

– Manufacturer code: 0020h

– Top device codes

M29W160FT: 22C4h

M29W320FT: 22CAh

Program/Erase controller

– Embedded byte/word program algorithms

Erase Suspend and Resume modes

– Bottom device codes

M29W160FB: 2249h

M29W320FB: 22CBh

– Read and Program another block during

Erase Suspend

Unlock Bypass Program command

Automotive device grade 3:

– Temperature: ^–40 to 125 °C

– Automotive grade certified

– Faster production/batch programming

V_PP/WP pin for Fast program and Write Protect

(available in the M29W320FT/B only)

TSOP48 package is RoHS compliant

Temporary block unprotection mode

Common Flash interface

– 64 bit security code

Low power consumption

– Standby and Automatic Standby

100,000 Program/Erase cycles per block

November 2008

208011-04

1/57

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