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M29W160DB70N6F

更新时间： 2024-11-10 10:56:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存
页数	文件大小	规格书
29页	183K
描述
16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory

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M29W160DB70N6F 数据手册

M29W160DT

M29W160DB

16 Mbit (2Mb x8 or 1Mb x16, Boot Block)

3V Supply Flash Memory

PRELIMINARY DATA

FEATURES SUMMARY

■ SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for

Figure 1. Packages

PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 70ns

■ PROGRAMMING TIME

– 10µs per Byte/Word typical

■ 35 MEMORY BLOCKS

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 32 Main Blocks

■ PROGRAM/ERASE CONTROLLER

– Embedded Program and Erase algorithms

■ ERASE SUSPEND and RESUME MODES

TSOP48 (N)

12 x 20mm

SO44 (M)

FBGA

– Read and Program another Block during

Erase Suspend

LFBGA48 (ZA)

8 x 6 solder balls

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ TEMPORARY BLOCK UNPROTECTION

MODE

■ SECURITY MEMORY BLOCK

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Top Device Code M29W160DT: 22C4h

– Bottom Device Code M29W160DB: 2249h

January 2001

1/29

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

12 3 4 5 6 7...29

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M29W160DB70ZA1T	STMICROELECTRONICS	获取价格	16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory
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M29W160DB70ZA6E	STMICROELECTRONICS	获取价格	16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory
M29W160DB70ZA6F	STMICROELECTRONICS	获取价格	16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory
M29W160DB70ZA6T	STMICROELECTRONICS	获取价格	16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory
M29W160DB90M1	STMICROELECTRONICS	获取价格	16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory