Datasheet > M29W128GL7AZA6E

M29W128GL7AZA6E

更新时间： 2024-11-11 14:59:03

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
76页	841K
描述
128Mb (16Mb x8 or 8Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory

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替代型号

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M29W128GL7AZA6E 数据手册

128Mb 3V Embedded Parallel NOR Flash

Features

Parallel NOR Flash Embedded Memory

M29W128GH, M29W128GL

• V_PP/WP# pin protection

– Protects first or last block regardless of block

Features

• Supply voltage

protection settings

– V_CC= 2.7–3.6V (program, erase, read)

– V_CCQ= 1.65–3.6V (I/O buffers)

– V_PPH= 12V for fast program (optional)

• Asynchronous random/page read

– Page size: 8 words or 16 bytes

– Page access: 25, 30ns

• Software protection

– Volatile protection

– Nonvolatile protection

– Password protection

• Extended memory block

– 128-word (256-byte) memory block for perma-

nent, secure identification

• Common flash interface

– 64-bit security code

• Low power consumption: Standby and automatic

mode

• Minimum 100,00 PROGRAM/ERASE cycles per

block

– Random access: 60ns¹, 70, 80ns

• Fast program commands: 32-word (64-byte) write

buffer

• Enhanced buffered program commands: 256-word

• Program time

– 16µs per byte/word TYP

– Chip program time: 5s with V_PPHand 8s without

V_PPH

• Memory organization

– Uniform blocks: 128 main blocks, 128-Kbytes or

64-Kwords each

• Program/erase controller

• RoHS compliant packages

– 56-pin TSOP (N) 14mm x 20mm

– 64-ball TBGA (ZA) 10mm x 13mm

– 64-ball FBGA (ZS) 11mm x 13mm

• Electronic signature

– Embedded byte/word program algorithms

• Program/erase suspend and resume capability

– Read from any block during a PROGRAM SUS-

PEND operation

– Read or program another block during an ERASE

SUSPEND operation

• Unlock bypass, block erase, chip erase, write to buf-

fer, enhanced buffer program commands

– Fast buffered/batch programming

– Fast block/chip erase

– Manufacturer code: 0020h

– M29W128GH uniform, last block protected by

V_PP/WP#: 227Eh + 2221h + 2201h

– M29W128GL uniform, first block protected by

V_PP/WP#: 227Eh + 2221h + 2200h

• Automotive device grade temperature

– –40°C to +125°C (automotive grade certified)

1. The 60ns device is available upon customer

request.

Note:

PDF: 09005aef84daa141

m29w_128mb.pdf - Rev. A 7/13 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...76

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M29W128GL7AZA6E 替代型号

型号	品牌	替代类型	描述	数据表
M29W128GL70ZA6E	MICRON	完全替代	128Mb (16Mb x8 or 8Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory

与M29W128GL7AZA6E相关器件

型号	品牌	获取价格	描述	数据表
M29W128GL7AZS6E	MICRON	获取价格	128Mb (16Mb x8 or 8Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W128GL7AZS6F	MICRON	获取价格	128Mb (16Mb x8 or 8Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W128GL90N6E	STMICROELECTRONICS	获取价格	Flash, 8MX16, 90ns, PDSO56, 14 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-56
M29W128GL90N6E	MICRON	获取价格	128Mb (16Mb x8 or 8Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W128GL90N6F	STMICROELECTRONICS	获取价格	Flash, 8MX16, 90ns, PDSO56, 14 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-56
M29W128GL90ZA6E	STMICROELECTRONICS	获取价格	8MX16 FLASH 3V PROM, 90ns, PBGA64, 10 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, TBGA-64
M29W128GL90ZA6F	STMICROELECTRONICS	获取价格	8MX16 FLASH 3V PROM, 90ns, PBGA64, 10 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, TBGA-64
M29W128GSH70N6E	MICRON	获取价格	128Mb (16Mb x8 or 8Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W128GSH70ZA6F	MICRON	获取价格	128Mb (16Mb x8 or 8Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W128GSH70ZS6E	MICRON	获取价格	128Mb (16Mb x8 or 8Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory

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