5秒后页面跳转
M29W128GL PDF预览

M29W128GL

更新时间: 2024-09-20 12:36:47
品牌 Logo 应用领域
镁光 - MICRON 闪存存储
页数 文件大小 规格书
76页 841K
描述
Parallel NOR Flash Embedded Memory

M29W128GL 数据手册

 浏览型号M29W128GL的Datasheet PDF文件第2页浏览型号M29W128GL的Datasheet PDF文件第3页浏览型号M29W128GL的Datasheet PDF文件第4页浏览型号M29W128GL的Datasheet PDF文件第5页浏览型号M29W128GL的Datasheet PDF文件第6页浏览型号M29W128GL的Datasheet PDF文件第7页 
128Mb 3V Embedded Parallel NOR Flash  
Features  
Parallel NOR Flash Embedded Memory  
M29W128GH, M29W128GL  
• VPP/WP# pin protection  
– Protects first or last block regardless of block  
Features  
• Supply voltage  
protection settings  
– VCC = 2.7–3.6V (program, erase, read)  
– VCCQ = 1.65–3.6V (I/O buffers)  
– VPPH = 12V for fast program (optional)  
• Asynchronous random/page read  
– Page size: 8 words or 16 bytes  
– Page access: 25, 30ns  
• Software protection  
– Volatile protection  
– Nonvolatile protection  
– Password protection  
• Extended memory block  
– 128-word (256-byte) memory block for perma-  
nent, secure identification  
• Common flash interface  
– 64-bit security code  
• Low power consumption: Standby and automatic  
mode  
• Minimum 100,00 PROGRAM/ERASE cycles per  
block  
– Random access: 60ns1, 70, 80ns  
• Fast program commands: 32-word (64-byte) write  
buffer  
• Enhanced buffered program commands: 256-word  
• Program time  
– 16µs per byte/word TYP  
– Chip program time: 5s with VPPH and 8s without  
VPPH  
• Memory organization  
– Uniform blocks: 128 main blocks, 128-Kbytes or  
64-Kwords each  
• Program/erase controller  
• RoHS compliant packages  
– 56-pin TSOP (N) 14mm x 20mm  
– 64-ball TBGA (ZA) 10mm x 13mm  
– 64-ball FBGA (ZS) 11mm x 13mm  
• Electronic signature  
– Embedded byte/word program algorithms  
• Program/erase suspend and resume capability  
– Read from any block during a PROGRAM SUS-  
PEND operation  
– Read or program another block during an ERASE  
SUSPEND operation  
• Unlock bypass, block erase, chip erase, write to buf-  
fer, enhanced buffer program commands  
– Fast buffered/batch programming  
– Fast block/chip erase  
– Manufacturer code: 0020h  
– M29W128GH uniform, last block protected by  
VPP/WP#: 227Eh + 2221h + 2201h  
– M29W128GL uniform, first block protected by  
VPP/WP#: 227Eh + 2221h + 2200h  
• Automotive device grade temperature  
– –40°C to +125°C (automotive grade certified)  
1. The 60ns device is available upon customer  
request.  
Note:  
PDF: 09005aef84daa141  
m29w_128mb.pdf - Rev. A 7/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
1
© 2012 Micron Technology, Inc. All rights reserved.  
Products and specifications discussed herein are subject to change by Micron without notice.  

与M29W128GL相关器件

型号 品牌 获取价格 描述 数据表
M29W128GL60N6E NUMONYX

获取价格

128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply Flash memory
M29W128GL60N6F NUMONYX

获取价格

128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply Flash memory
M29W128GL60ZA6E NUMONYX

获取价格

128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply Flash memory
M29W128GL60ZA6E MICRON

获取价格

128Mb (16Mb x8 or 8Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W128GL60ZA6F NUMONYX

获取价格

128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply Flash memory
M29W128GL6AZS6E MICRON

获取价格

128Mb (16Mb x8 or 8Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W128GL70N3E MICRON

获取价格

128Mb (16Mb x8 or 8Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W128GL70N3F MICRON

获取价格

Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
M29W128GL70N6E NUMONYX

获取价格

128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply Flash memory
M29W128GL70N6E MICRON

获取价格

128Mb (16Mb x8 or 8Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory