Datasheet > M29W128GL

M29W128GL

更新时间： 2024-11-10 12:36:47

品牌	Logo	应用领域
镁光 - MICRON		闪存存储
页数	文件大小	规格书
76页	841K
描述
Parallel NOR Flash Embedded Memory

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中文翻译

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数据手册

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M29W128GL 数据手册

128Mb 3V Embedded Parallel NOR Flash

Features

Parallel NOR Flash Embedded Memory

M29W128GH, M29W128GL

• V_PP/WP# pin protection

– Protects first or last block regardless of block

Features

• Supply voltage

protection settings

– V_CC= 2.7–3.6V (program, erase, read)

– V_CCQ= 1.65–3.6V (I/O buffers)

– V_PPH= 12V for fast program (optional)

• Asynchronous random/page read

– Page size: 8 words or 16 bytes

– Page access: 25, 30ns

• Software protection

– Volatile protection

– Nonvolatile protection

– Password protection

• Extended memory block

– 128-word (256-byte) memory block for perma-

nent, secure identification

• Common flash interface

– 64-bit security code

• Low power consumption: Standby and automatic

mode

• Minimum 100,00 PROGRAM/ERASE cycles per

block

– Random access: 60ns¹, 70, 80ns

• Fast program commands: 32-word (64-byte) write

buffer

• Enhanced buffered program commands: 256-word

• Program time

– 16µs per byte/word TYP

– Chip program time: 5s with V_PPHand 8s without

V_PPH

• Memory organization

– Uniform blocks: 128 main blocks, 128-Kbytes or

64-Kwords each

• Program/erase controller

• RoHS compliant packages

– 56-pin TSOP (N) 14mm x 20mm

– 64-ball TBGA (ZA) 10mm x 13mm

– 64-ball FBGA (ZS) 11mm x 13mm

• Electronic signature

– Embedded byte/word program algorithms

• Program/erase suspend and resume capability

– Read from any block during a PROGRAM SUS-

PEND operation

– Read or program another block during an ERASE

SUSPEND operation

• Unlock bypass, block erase, chip erase, write to buf-

fer, enhanced buffer program commands

– Fast buffered/batch programming

– Fast block/chip erase

– Manufacturer code: 0020h

– M29W128GH uniform, last block protected by

V_PP/WP#: 227Eh + 2221h + 2201h

– M29W128GL uniform, first block protected by

V_PP/WP#: 227Eh + 2221h + 2200h

• Automotive device grade temperature

– –40°C to +125°C (automotive grade certified)

1. The 60ns device is available upon customer

request.

Note:

PDF: 09005aef84daa141

m29w_128mb.pdf - Rev. A 7/13 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...76

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与M29W128GL相关器件

型号	品牌	获取价格	描述	数据表
M29W128GL60N6E	NUMONYX	获取价格	128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply Flash memory
M29W128GL60N6F	NUMONYX	获取价格	128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply Flash memory
M29W128GL60ZA6E	NUMONYX	获取价格	128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply Flash memory
M29W128GL60ZA6E	MICRON	获取价格	128Mb (16Mb x8 or 8Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W128GL60ZA6F	NUMONYX	获取价格	128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply Flash memory
M29W128GL6AZS6E	MICRON	获取价格	128Mb (16Mb x8 or 8Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W128GL70N3E	MICRON	获取价格	128Mb (16Mb x8 or 8Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W128GL70N3F	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
M29W128GL70N6E	NUMONYX	获取价格	128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply Flash memory
M29W128GL70N6E	MICRON	获取价格	128Mb (16Mb x8 or 8Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory

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