Datasheet > M29W128GH

M29W128GH

更新时间： 2024-11-08 05:01:07

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存
页数	文件大小	规格书
94页	1789K
描述
128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply Flash memory

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数据手册

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M29W128GH 数据手册

M29W128GH

M29W128GL

128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block)

3 V supply Flash memory

Features

■ Supply voltage

– V = 2.7 to 3.6 V for Program, Erase and

Read

– V

= 1.65 to 3.6 V for I/O buffers

CCQ

PPH

TSOP56 (N)

14 x 20 mm

= 12 V for Fast Program (optional)

■ Asynchronous Random/Page Read

– Page size: 8 words or 16 bytes

– Page access: 25, 30 ns

BGA

– Random access: 60 (only available upon

customer request) or 70, 80 ns

TBGA64 (ZA)

10 x 13 mm

■ Fast Program commands

– 32 words (64-byte write buffer)

– Faster Production/Batch Programming

– Faster Block and Chip Erase

■ Enhanced Buffered Program commands

– 256 words

■ V /WP pin for Fast Program and Write:

protects first or last block regardless of block

protection settings

■ Programming time

– 16 µs per byte/word typical

■ Software protection:

– Volatile protection

– Chip program time: 5 s with V

and 8 s

PPH

without V

PPH

– Non-volatile protection

– Password protection

■ Memory organization

– M29128GH/L: 128 main blocks,

128 Kbytes/64 Kwords each

■ Common Flash interface

– 64 bit security code

■ Program/Erase controller

– Embedded byte/word program algorithms

■ 128 word extended memory block

– Extra block used as security block or to

store additional information

■ Program/ Erase Suspend and Resume

– Read from any block during Program

Suspend

■ Low power consumption

– Read and Program another block during

Erase Suspend

– Standby and automatic standby

■ Minimum 100,000 Program/Erase cycles per

■ Unlock Bypass/Block Erase/Chip Erase/Write

to Buffer/Enhanced Buffered Program

commands

block

■ ECOPACK packages

Table 1.

Device summary

Root part number

Device code

M29W128GH: uniform, last block protected by V_PP/WP

M29W128GL: uniform, first block protected by V_PP/WP

227Eh + 2221h + 2201h

227Eh + 2221h + 2200h

March 2008

Rev 4

1/94

www.numonyx.com

12 3 4 5 6 7...94

中文翻译

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与M29W128GH相关器件

型号	品牌	获取价格	描述	数据表
M29W128GH60N6E	NUMONYX	获取价格	128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply Flash memory
M29W128GH60N6F	NUMONYX	获取价格	128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply Flash memory
M29W128GH60ZA6E	NUMONYX	获取价格	128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply Flash memory
M29W128GH60ZA6E	MICRON	获取价格	128Mb (16Mb x8 or 8Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W128GH60ZA6F	NUMONYX	获取价格	128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply Flash memory
M29W128GH6AZS6E	MICRON	获取价格	128Mb (16Mb x8 or 8Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W128GH70N3E	MICRON	获取价格	128Mb (16Mb x8 or 8Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W128GH70N3F	MICRON	获取价格	128Mb (16Mb x8 or 8Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W128GH70N6E	NUMONYX	获取价格	128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply Flash memory
M29W128GH70N6E	STMICROELECTRONICS	获取价格	8MX16 FLASH 3V PROM, 70ns, PDSO56, 14 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-56

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