Datasheet > 存储 > 闪存> M29W128FL70ZA6F

M29W128FL70ZA6F

更新时间： 2024-09-20 03:11:39

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存
页数	文件大小	规格书
78页	1564K
描述
128 Mbit (8Mb x 16 or 16Mb x 8, Page, Uniform Block) 3V Supply Flash Memory

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M29W128FL70ZA6F 数据手册

M29W128FH

M29W128FL

128 Mbit (8Mb x 16 or 16Mb x 8, Page, Uniform Block)

3V Supply Flash Memory

Feature summary

■ Supply voltage

– V_CC= 2.7 to 3.6V for Program, Erase and

Read

– V_PP=12V for Fast Program (optional)

■ Asynchronous Random/Page Read

– Page Width: 8 Words/16 Bytes

– Page Access: 25, 30ns

TSOP56 (N)

14 x 20mm

– Random Access: 60, 70ns

BGA

■ Programming time

– 10µs per Byte/Word (typical)

– 4 Words / 8 Bytes Program

– 32-Word (64-Bytes) Write Buffer

TBGA64 (ZA)

10 x 13mm

■ 64 KByte (32 KWord) Uniform Blocks

■ Program/ Erase Suspend and Resume Modes

■ Electronic Signature

– Read from any Block during Program

Suspend

– Manufacturer Code: 0020h

– Device Code:

– Read and Program another Block during

Erase Suspend

M29W128FH: 227Eh + 2212h + 228Ah

M29W128FL: 227Eh + 2212h + 228Bh

■ Unlock Bypass Program

■ ECOPACK^®packages

– Faster Production/Batch Programming

■ Common Flash Interface

– 64 bit Security Code

■ 100,000 Program/Erase cycles per block

■ Low power consumption

– Standby and Automatic Standby

■ Hardware Block Protection

– V_PP/WP pin for fast program and write

protect of the highest (M29W128FH) or

lowest block (M29W128FL)

■ Extended Memory Block:

Extra block used as security block or to store

additional information

December 2007

Rev 7

1/78

www.numonyx.com

12 3 4 5 6 7...78

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