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M29W102BT90N6 PDF预览

M29W102BT90N6

更新时间: 2024-09-20 14:52:51
品牌 Logo 应用领域
恒忆 - NUMONYX 光电二极管内存集成电路
页数 文件大小 规格书
20页 155K
描述
Flash, 64KX16, 90ns, PDSO40, 10 X 14 MM, PLASTIC, TSOP-40

M29W102BT90N6 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:10 X 14 MM, PLASTIC, TSOP-40
针数:40Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.52最长访问时间:90 ns
其他特性:TOP BOOT BLOCK启动块:TOP
JESD-30 代码:R-PDSO-G40JESD-609代码:e0
长度:12.4 mm内存密度:1048576 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1端子数量:40
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:64KX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL编程电压:2.7 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
类型:NOR TYPE宽度:10 mm
Base Number Matches:1

M29W102BT90N6 数据手册

 浏览型号M29W102BT90N6的Datasheet PDF文件第2页浏览型号M29W102BT90N6的Datasheet PDF文件第3页浏览型号M29W102BT90N6的Datasheet PDF文件第4页浏览型号M29W102BT90N6的Datasheet PDF文件第5页浏览型号M29W102BT90N6的Datasheet PDF文件第6页浏览型号M29W102BT90N6的Datasheet PDF文件第7页 
M29W102BT  
M29W102BB  
1 Mbit (64Kb x16, Boot Block)  
Low Voltage Single Supply Flash Memory  
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 50ns  
PROGRAMMING TIME  
– 10µs per Word typical  
5 MEMORY BLOCKS  
– 1 Boot Block (Top or Bottom Location)  
– 2 Parameter and 2 Main Blocks  
PROGRAM/ERASE CONTROLLER  
– Embedded Word Program algorithm  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
ERASE SUSPEND and RESUME MODES  
TSOP40 (N)  
10 x 14mm  
Figure 1. Logic Diagram  
– Read and Program another Block during  
Erase Suspend  
UNLOCK BYPASS PROGRAM COMMAND  
V
CC  
– Faster Production/Batch Programming  
TEMPORARY BLOCK UNPROTECTION  
MODE  
16  
16  
LOW POWER CONSUMPTION  
A0-A15  
DQ0-DQ15  
– Standby and Automatic Standby  
W
E
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
M29W102BT  
M29W102BB  
M28F102 COMPATIBLE  
G
– Pin-out and Read Mode  
RP  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
V
SS  
– Top Device Code M29W102BT: 0099h  
– Bottom Device Code M29W102BB: 0098h  
AI02785  
March 2000  
1/20  

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