Datasheet > M29W102BT50N1

M29W102BT50N1

更新时间： 2024-11-08 15:39:39

品牌	Logo	应用领域
恒忆 - NUMONYX		可编程只读存储器光电二极管
页数	文件大小	规格书
20页	155K
描述
64KX16 FLASH 3V PROM, 50ns, PDSO40, 10 X 14 MM, PLASTIC, TSOP-40

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中文翻译

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数据手册

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M29W102BT50N1 数据手册

M29W102BT

M29W102BB

1 Mbit (64Kb x16, Boot Block)

Low Voltage Single Supply Flash Memory

■ SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for

PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 50ns

■ PROGRAMMING TIME

– 10µs per Word typical

■ 5 MEMORY BLOCKS

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 2 Main Blocks

■ PROGRAM/ERASE CONTROLLER

– Embedded Word Program algorithm

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

■ ERASE SUSPEND and RESUME MODES

TSOP40 (N)

10 x 14mm

Figure 1. Logic Diagram

– Read and Program another Block during

Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ TEMPORARY BLOCK UNPROTECTION

MODE

■ LOW POWER CONSUMPTION

A0-A15

DQ0-DQ15

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

M29W102BT

M29W102BB

■ M28F102 COMPATIBLE

– Pin-out and Read Mode

■ 20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Top Device Code M29W102BT: 0099h

– Bottom Device Code M29W102BB: 0098h

AI02785

March 2000

1/20

12 3 4 5 6 7...20

中文翻译

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