Datasheet > M29W064FT6AZA6E

M29W064FT6AZA6E

更新时间： 2024-09-21 15:18:15

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
70页	1269K
描述
64Mb (8Mb x8 or 4Mb x16), 3V, Page, Boot Block, Parallel NOR Flash Memory

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数据手册

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M29W064FT6AZA6E 数据手册

M29W064FT

M29W064FB

64-Mbit (8 Mbit x8 or 4 Mbit x16, page, boot block)

3 V supply flash memory

Preliminary Data

Features

Supply voltage

– V_CC= 2.7 V to 3.6 V for program, erase,

read

– V_PP=12 V for fast program (optional)

Asynchronous random/page read

– Page width: 4 words

TSOP48 (N)

12 x 20 mm

– Page access: 25 ns

– Random access: 60, 70 ns

Programming time

– 10 μs per byte/word typical

– 4 words/8 bytes program

FBGA

135 memory blocks

TFBGA48 (ZA)

6x8mm

– 1 boot block and 7 parameter blocks,

8 Kbytes each (top or bottom location)

– 127 main blocks, 64 Kbytes each

100,000 program/erase cycles per block

Program/erase controller

Low power consumption

– Embedded byte/word program algorithms

– Standby and automatic standby

Program/erase suspend and resume

Electronic signature

– Read from any block during program

suspend

– Manufacturer code: 0020h

Automotive device grade 3

– Read and program another block during

erase suspend

– Temperature: -40 to 125 °C

– Automotive grade certified (AEC-Q100)

Unlock Bypass Program command

Automotive device grade 6

– Faster production/batch programming

– Temperature: -40 to 85 °C

V_PP/WP pin for fast program and write protect

Temporary block unprotection mode

– Automotive grade certified (AEC-Q100)

RoHS compliant packages

Common flash interface

– 64-bit security code

Table 1.

Device summary

Root part number

Device code

M29W064FT

M29W064FB

22EDh

22FDh

November 2008

Rev 4

1/69

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

www.numonyx.com

12 3 4 5 6 7...70

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