Datasheet > M29W064FB90N3F

M29W064FB90N3F

更新时间： 2024-11-08 03:36:11

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存
页数	文件大小	规格书
69页	1265K
描述
64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory

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数据手册

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M29W064FB90N3F 数据手册

M29W064FT

M29W064FB

64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block)

3 V supply Flash memory

Preliminary Data

Features

■ Supply voltage

– V = 2.7 V to 3.6 V for program, erase,

read

– V =12 V for fast program (optional)

■ Asynchronous random/page read

– Page width: 4 words

– Page access: 25 ns

– Random access: 60, 70 ns

■ Programming time

TSOP48 (N)

12 x 20 mm

– 10 µs per byte/word typical

– 4 words/8 bytes program

■ 135 memory blocks

– 1 boot block and 7 parameter blocks,

8 Kbytes each (top or bottom location)

■ 100,000 program/erase cycles per block

■ Extended memory block

– 127 main blocks, 64 Kbytes each

■ Program/erase controller

– Extra block used as security block or to

store additional information

– Embedded byte/word program algorithms

■ Program/erase suspend and resume

■ Low power consumption

– Read from any block during program

suspend

– Standby and automatic standby

– Read and program another block during

erase suspend

■ Electronic signature

– Manufacturer code: 0020h

■ Unlock Bypass Program command

■ Automotive device grade 3

– Faster production/batch programming

– Temperature: -40 to 125 °C

■ V /WP pin for fast program and write protect

– Automotive grade certified (AEC-Q100)

■ Temporary block unprotection mode

■ ECOPACK packages

■ Common Flash interface

– 64-bit security code

Table 1.

Device summary

Root part number

Device code

M29W064FT

M29W064FB

22EDh

22FDh

March 2008

Rev 2

1/69

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

www.numonyx.com

12 3 4 5 6 7...69

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