5秒后页面跳转
M29W040B55NZ6F PDF预览

M29W040B55NZ6F

更新时间: 2024-11-04 03:04:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路光电二极管ISM频段
页数 文件大小 规格书
20页 436K
描述
4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

M29W040B55NZ6F 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TSOP包装说明:8 X 14 MM, LEAD FREE, PLASTIC, TSOP-32
针数:32Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.64Is Samacsys:N
最长访问时间:55 ns命令用户界面:YES
数据轮询:YES耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G32JESD-609代码:e3/e6
长度:12.4 mm内存密度:4194304 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:8
端子数量:32字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:512KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP32,.56,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3.3 V编程电压:3 V
认证状态:Not Qualified座面最大高度:1.2 mm
部门规模:64K最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN/TIN BISMUTH端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40切换位:YES
类型:NOR TYPE宽度:8 mm
Base Number Matches:1

M29W040B55NZ6F 数据手册

 浏览型号M29W040B55NZ6F的Datasheet PDF文件第2页浏览型号M29W040B55NZ6F的Datasheet PDF文件第3页浏览型号M29W040B55NZ6F的Datasheet PDF文件第4页浏览型号M29W040B55NZ6F的Datasheet PDF文件第5页浏览型号M29W040B55NZ6F的Datasheet PDF文件第6页浏览型号M29W040B55NZ6F的Datasheet PDF文件第7页 
M29W040B  
4 Mbit (512Kb x8, Uniform Block)  
Low Voltage Single Supply Flash Memory  
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 55ns  
PROGRAMMING TIME  
– 10µs per Byte typical  
8 UNIFORM 64 Kbytes MEMORY BLOCKS  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte Program algorithm  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
ERASE SUSPEND and RESUME MODES  
PLCC32 (K)  
TSOP32 (N)  
8 x 20mm  
– Read and Program another Block during  
Erase Suspend  
TSOP32 (NZ)  
8 x 14mm  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
LOW POWER CONSUMPTION  
Figure 1. Logic Diagram  
– Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
V
CC  
19  
8
– Device Code: E3h  
A0-A18  
DQ0-DQ7  
ECOPACK® PACKAGES AVAILABLE  
W
E
M29W040B  
G
V
SS  
AI02953  
September 2005  
1/20  

与M29W040B55NZ6F相关器件

型号 品牌 获取价格 描述 数据表
M29W040B55NZ6T STMICROELECTRONICS

获取价格

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
M29W040B70K1 STMICROELECTRONICS

获取价格

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
M29W040B70K1E STMICROELECTRONICS

获取价格

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
M29W040B70K1F STMICROELECTRONICS

获取价格

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
M29W040B70K1T STMICROELECTRONICS

获取价格

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
M29W040B70K6 STMICROELECTRONICS

获取价格

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
M29W040B70K6E STMICROELECTRONICS

获取价格

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
M29W040B70K6F STMICROELECTRONICS

获取价格

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
M29W040B70K6T STMICROELECTRONICS

获取价格

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
M29W040B70N1 STMICROELECTRONICS

获取价格

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory