是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | QFJ | 包装说明: | QCCJ, |
针数: | 32 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.51 |
风险等级: | 5.41 | 最长访问时间: | 55 ns |
JESD-30 代码: | R-PQCC-J32 | JESD-609代码: | e3 |
长度: | 13.97 mm | 内存密度: | 1048576 bit |
内存集成电路类型: | FLASH | 内存宽度: | 8 |
功能数量: | 1 | 端子数量: | 32 |
字数: | 131072 words | 字数代码: | 128000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 125 °C |
最低工作温度: | -40 °C | 组织: | 128KX8 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | QCCJ |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | 250 |
编程电压: | 2.7 V | 认证状态: | Not Qualified |
座面最大高度: | 3.56 mm | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 2.7 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | AUTOMOTIVE | 端子面层: | Matte Tin (Sn) |
端子形式: | J BEND | 端子节距: | 1.27 mm |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
类型: | NOR TYPE | 宽度: | 11.43 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M29W010B55K6 | STMICROELECTRONICS |
获取价格 |
1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory | |
M29W010B55K6 | NUMONYX |
获取价格 |
128KX8 FLASH 2.7V PROM, 55ns, PQCC32, PLASTIC, LCC-32 | |
M29W010B55K6E | STMICROELECTRONICS |
获取价格 |
1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory | |
M29W010B55K6E | NUMONYX |
获取价格 |
Flash, 128KX8, 55ns, PQCC32, LEAD FREE, PLASTIC, LCC-32 | |
M29W010B55K6F | STMICROELECTRONICS |
获取价格 |
1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory | |
M29W010B55K6F | NUMONYX |
获取价格 |
128KX8 FLASH 2.7V PROM, 55ns, PQCC32, LEAD FREE, PLASTIC, LCC-32 | |
M29W010B55K6T | STMICROELECTRONICS |
获取价格 |
1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory | |
M29W010B55K6T | NUMONYX |
获取价格 |
Flash, 128KX8, 55ns, PQCC32, PLASTIC, LCC-32 | |
M29W010B55N1 | STMICROELECTRONICS |
获取价格 |
1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory | |
M29W010B55N1 | NUMONYX |
获取价格 |
Flash, 128KX8, 55ns, PDSO32, 8 X 20 MM, PLASTIC, TSOP-32 |