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M29W010B45N6T

更新时间： 2024-11-18 22:36:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存内存集成电路光电二极管
页数	文件大小	规格书
19页	158K
描述
1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

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M29W010B45N6T 数据手册

M29W010B

1 Mbit (128Kb x8, Uniform Block)

Low Voltage Single Supply Flash Memory

PRELIMINARY DATA

■ SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for

PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 45ns

■ PROGRAMMING TIME

– 10µs by Byte typical

■ 8 UNIFORM 16 Kbyte MEMORY BLOCKS

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte Program algorithm

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

■ ERASE SUSPEND and RESUME MODES

PLCC32 (K)

TSOP32 (N)

8 x 20mm

– Read and Program another Block during

Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ LOW POWER CONSUMPTION

Figure 1. Logic Diagram

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: 23h

A0-A16

DQ0-DQ7

M29W010B

AI02747

March 2000

1/19

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

12 3 4 5 6 7...19

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