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M29W010B45N3 PDF预览

M29W010B45N3

更新时间: 2024-10-02 20:14:11
品牌 Logo 应用领域
恒忆 - NUMONYX 光电二极管内存集成电路
页数 文件大小 规格书
19页 406K
描述
Flash, 128KX8, 45ns, PDSO32, 8 X 20 MM, PLASTIC, TSOP-32

M29W010B45N3 技术参数

生命周期:Obsolete零件包装代码:TSOP
包装说明:TSSOP,针数:32
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.5
Is Samacsys:N最长访问时间:45 ns
JESD-30 代码:R-PDSO-G32JESD-609代码:e3
长度:18.4 mm内存密度:1048576 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:128KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):260
编程电压:2.7 V认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:MATTE TIN
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
类型:NOR TYPE宽度:8 mm
Base Number Matches:1

M29W010B45N3 数据手册

 浏览型号M29W010B45N3的Datasheet PDF文件第2页浏览型号M29W010B45N3的Datasheet PDF文件第3页浏览型号M29W010B45N3的Datasheet PDF文件第4页浏览型号M29W010B45N3的Datasheet PDF文件第5页浏览型号M29W010B45N3的Datasheet PDF文件第6页浏览型号M29W010B45N3的Datasheet PDF文件第7页 
M29W010B  
1 Mbit (128Kb x8, Uniform Block)  
Low Voltage Single Supply Flash Memory  
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 45ns  
PROGRAMMING TIME  
– 10µs by Byte typical  
8 UNIFORM 16 Kbyte MEMORY BLOCKS  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte Program algorithm  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
ERASE SUSPEND and RESUME MODES  
PLCC32 (K)  
TSOP32 (N)  
8 x 20mm  
– Read and Program another Block during  
Erase Suspend  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
LOW POWER CONSUMPTION  
Figure 1. Logic Diagram  
– Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
V
BLOCK  
CC  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
17  
8
A0-A16  
DQ0-DQ7  
– Device Code: 23h  
ECOPACK® PACKAGES AVAILABLE  
W
M29W010B  
E
G
V
SS  
AI02747  
September 2005  
1/19  

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1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
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