5秒后页面跳转
M29W008AT120N6TR PDF预览

M29W008AT120N6TR

更新时间: 2024-02-17 18:14:34
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
30页 219K
描述
1MX8 FLASH 2.7V PROM, 120ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40

M29W008AT120N6TR 技术参数

生命周期:Transferred零件包装代码:TSOP
包装说明:TSOP1,针数:40
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.33
Is Samacsys:N最长访问时间:120 ns
其他特性:20 YEARS DATA RETENTION; TOP BOOT BLOCK启动块:TOP
数据保留时间-最小值:20JESD-30 代码:R-PDSO-G40
长度:18.4 mm内存密度:8388608 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:40
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1MX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL编程电压:2.7 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL类型:NOR TYPE
宽度:10 mmBase Number Matches:1

M29W008AT120N6TR 数据手册

 浏览型号M29W008AT120N6TR的Datasheet PDF文件第2页浏览型号M29W008AT120N6TR的Datasheet PDF文件第3页浏览型号M29W008AT120N6TR的Datasheet PDF文件第4页浏览型号M29W008AT120N6TR的Datasheet PDF文件第5页浏览型号M29W008AT120N6TR的Datasheet PDF文件第6页浏览型号M29W008AT120N6TR的Datasheet PDF文件第7页 
M29W008AT  
M29W008AB  
8 Mbit (1Mb x8, Boot Block)  
Low Voltage Single Supply Flash Memory  
2.7V to 3.6V SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 80ns  
PROGRAMMING TIME: 10µs typical  
PROGRAM/ERASE CONTROLLER (P/E.C.)  
– Program Byte-by-Byte  
– Status Register bits and Ready/Busy Output  
SECURITY PROTECTION MEMORY AREA  
INSTRUCTIONS ADDRESS CODING: 3 digits  
MEMORY BLOCKS  
TSOP40 (N)  
10 x 20mm  
– Boot Block (Top or Bottom location)  
– Parameter and Main blocks  
BLOCK, MULTI-BLOCK and CHIP ERASE  
MULTI BLOCK PROTECTION/TEMPORARY  
UNPROTECTION MODES  
Figure 1. Logic Diagram  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
V
LOW POWER CONSUMPTION  
CC  
– Stand-by and Automatic Stand-by  
100,000 PROGRAM/ERASE CYCLES per  
20  
8
BLOCK  
A0-A19  
DQ0-DQ7  
RB  
20 YEARS DATA RETENTION  
– Defectivity below 1ppm/year  
W
E
M29W008AT  
M29W008AB  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
G
– Top Device Code, M29W008AT: D2h  
– Bottom Device Code, M29W008AB: DCh  
RP  
V
SS  
AI02716  
March 2000  
1/30  

与M29W008AT120N6TR相关器件

型号 品牌 获取价格 描述 数据表
M29W008AT80N1T STMICROELECTRONICS

获取价格

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W008AT80N1TR STMICROELECTRONICS

获取价格

暂无描述
M29W008AT80N5T STMICROELECTRONICS

获取价格

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W008AT80N5TR STMICROELECTRONICS

获取价格

暂无描述
M29W008AT80N6T STMICROELECTRONICS

获取价格

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W008AT90N1T STMICROELECTRONICS

获取价格

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W008AT90N1TR STMICROELECTRONICS

获取价格

暂无描述
M29W008AT90N5 STMICROELECTRONICS

获取价格

1MX8 FLASH 2.7V PROM, 90ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40
M29W008AT90N5T STMICROELECTRONICS

获取价格

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W008AT90N5TR STMICROELECTRONICS

获取价格

1MX8 FLASH 2.7V PROM, 90ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40