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M29W002BT70N6 PDF预览

M29W002BT70N6

更新时间: 2024-12-01 12:58:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
20页 158K
描述
256KX8 FLASH 2.7V PROM, 70ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40

M29W002BT70N6 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:10 X 20 MM, PLASTIC, TSOP-40
针数:40Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.92Is Samacsys:N
最长访问时间:70 ns其他特性:TOP BOOT BLOCK
启动块:TOP命令用户界面:YES
数据轮询:YESJESD-30 代码:R-PDSO-G40
JESD-609代码:e0长度:18.4 mm
内存密度:2097152 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
部门数/规模:1,2,1,3端子数量:40
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP40,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/3.3 V
编程电压:2.7 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:16K,8K,32K,64K最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE宽度:10 mm
Base Number Matches:1

M29W002BT70N6 数据手册

 浏览型号M29W002BT70N6的Datasheet PDF文件第2页浏览型号M29W002BT70N6的Datasheet PDF文件第3页浏览型号M29W002BT70N6的Datasheet PDF文件第4页浏览型号M29W002BT70N6的Datasheet PDF文件第5页浏览型号M29W002BT70N6的Datasheet PDF文件第6页浏览型号M29W002BT70N6的Datasheet PDF文件第7页 
M29W002BT  
M29W002BB  
2 Mbit (256Kb x8, Boot Block)  
Low Voltage Single Supply Flash Memory  
PRELIMINARY DATA  
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 55ns  
PROGRAMMING TIME  
– 10µs by Byte typical  
7 MEMORY BLOCKS  
– 1 Boot Block (Top or Bottom Location)  
– 2 Parameter and 4 Main Blocks  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte Program algorithm  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
– Ready/Busy Output Pin  
TSOP40 (N)  
10 x 20mm  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
Figure 1. Logic Diagram  
TEMPORARY BLOCK UNPROTECTION  
MODE  
V
CC  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
LOW POWER CONSUMPTION  
18  
8
– Standby and Automatic Standby  
A0-A17  
DQ0-DQ7  
RB  
100,000 PROGRAM/ERASE CYCLES per  
W
E
BLOCK  
M29W002BT  
M29W002BB  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
G
RP  
– Manufacturer Code: 20h  
– Top Device Code M29W002BT: 40h  
– Bottom Device Code M29W002BB: C2h  
V
SS  
AI02955  
March 2000  
1/20  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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