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M29W002BB55N1T PDF预览

M29W002BB55N1T

更新时间: 2024-02-02 08:20:40
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
20页 158K
描述
2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory

M29W002BB55N1T 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:10 X 20 MM, PLASTIC, TSOP-40
针数:40Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.59最长访问时间:55 ns
其他特性:BOTTOM BOOT BLOCK启动块:BOTTOM
命令用户界面:YES数据轮询:YES
JESD-30 代码:R-PDSO-G40JESD-609代码:e0
长度:18.4 mm内存密度:2097152 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:1,2,1,3
端子数量:40字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:256KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP40,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:16K,8K,32K,64K
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.02 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:YES类型:NOR TYPE
宽度:10 mmBase Number Matches:1

M29W002BB55N1T 数据手册

 浏览型号M29W002BB55N1T的Datasheet PDF文件第2页浏览型号M29W002BB55N1T的Datasheet PDF文件第3页浏览型号M29W002BB55N1T的Datasheet PDF文件第4页浏览型号M29W002BB55N1T的Datasheet PDF文件第5页浏览型号M29W002BB55N1T的Datasheet PDF文件第6页浏览型号M29W002BB55N1T的Datasheet PDF文件第7页 
M29W002BT  
M29W002BB  
2 Mbit (256Kb x8, Boot Block)  
Low Voltage Single Supply Flash Memory  
PRELIMINARY DATA  
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 55ns  
PROGRAMMING TIME  
– 10µs by Byte typical  
7 MEMORY BLOCKS  
– 1 Boot Block (Top or Bottom Location)  
– 2 Parameter and 4 Main Blocks  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte Program algorithm  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
– Ready/Busy Output Pin  
TSOP40 (N)  
10 x 20mm  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
Figure 1. Logic Diagram  
TEMPORARY BLOCK UNPROTECTION  
MODE  
V
CC  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
LOW POWER CONSUMPTION  
18  
8
– Standby and Automatic Standby  
A0-A17  
DQ0-DQ7  
RB  
100,000 PROGRAM/ERASE CYCLES per  
W
E
BLOCK  
M29W002BT  
M29W002BB  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
G
RP  
– Manufacturer Code: 20h  
– Top Device Code M29W002BT: 40h  
– Bottom Device Code M29W002BB: C2h  
V
SS  
AI02955  
March 2000  
1/20  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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