Datasheet > M29F800FT5AN6F2

M29F800FT5AN6F2

更新时间： 2024-11-25 15:17:43

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
56页	679K
描述
Top/Bottom Boot Block, 5V, Parallel NOR Flash Memory

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数据手册
替代型号

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M29F800FT5AN6F2 数据手册

M29FxxxFT/B

Features

Micron Parallel NOR Flash Embedded

Memory

Top/Bottom Boot Block 5V Supply

M29F200FT/B, M29F400FT/B, M29F800FT/B, M29F160FT/B

• RoHS-compliant packages

– TSOP48

– SO44 (16Mb not available for this package)

• Automotive device grade 3

– Temperature: –40 to +125°C

Features

• Supply voltage

– V_CC= 5V

• Access time: 55ns

• Program/erase controller

– Embedded byte/word program algorithms

• Erase suspend and resume modes

• Low power consumption

– Standby and automatic standby

• 100,000 PROGRAM/ERASE cycles per block

• Electronic signature

• Automotive device grade 6

– Temperature: –40 to +85°C

• Automotive grade certified (AEC-Q100)

– Manufacturer code: 0x01h

• Top device codes

– M29F200FT: 0x2251

– M29F400FT: 0x2223

– M29F800FT: 0x22D6

– M29F160FT: 0x22D2

• Bottom device codes

– M29F200FB: 0x2257

– M29F400FB: 0x22AB

– M29F800FB: 0x2258

– M29F160FB: 0x22D8

CCMTD-1725822587-8401

m29fxxxf/t_2mb-16mb.pdf - Rev. C 5/18 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

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M29F800FT5AN6F2 替代型号

型号	品牌	替代类型	描述	数据表
M29F800FB5AN6F2	MICRON	完全替代	Top/Bottom Boot Block, 5V, Parallel NOR Flash Memory
M29F800FB5AN6E2	MICRON	完全替代	Top/Bottom Boot Block, 5V, Parallel NOR Flash Memory

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