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M29F800DB55N6E PDF预览

M29F800DB55N6E

更新时间: 2024-02-28 17:20:44
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
39页 254K
描述
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

M29F800DB55N6E 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:TSOP包装说明:12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
针数:48Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.15Is Samacsys:N
最长访问时间:55 ns其他特性:BOTTOM BOOT BLOCK
备用内存宽度:8启动块:BOTTOM
命令用户界面:YES通用闪存接口:YES
数据轮询:YESJESD-30 代码:R-PDSO-G48
JESD-609代码:e3/e6长度:18.4 mm
内存密度:8388608 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:1,2,1,15端子数量:48
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512KX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP48,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:5 V
编程电压:5 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:16K,8K,32K,64K最大待机电流:0.00015 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN/TIN BISMUTH端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE宽度:12 mm
Base Number Matches:1

M29F800DB55N6E 数据手册

 浏览型号M29F800DB55N6E的Datasheet PDF文件第2页浏览型号M29F800DB55N6E的Datasheet PDF文件第3页浏览型号M29F800DB55N6E的Datasheet PDF文件第4页浏览型号M29F800DB55N6E的Datasheet PDF文件第5页浏览型号M29F800DB55N6E的Datasheet PDF文件第6页浏览型号M29F800DB55N6E的Datasheet PDF文件第7页 
M29F800DT  
M29F800DB  
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)  
5V Supply Flash Memory  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
– V = 5V ±10% for Program, Erase and Read  
CC  
ACCESS TIME: 55, 70, 90ns  
PROGRAMMING TIME  
– 10µs per Byte/Word typical  
19 MEMORY BLOCKS  
– 1 Boot Block (Top or Bottom Location)  
– 2 Parameter and 16 Main Blocks  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte/Word Program algorithms  
ERASE SUSPEND and RESUME MODES  
SO44 (M)  
– Read and Program another Block during  
Erase Suspend  
TSOP48 (N)  
12 x 20mm  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
TEMPORARY BLOCK UNPROTECTION  
MODE  
COMMON FLASH INTERFACE  
– 64 bit Security Code  
LOW POWER CONSUMPTION  
– Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
– Top Device Code M29F800DT: 22ECh  
– Bottom Device Code M29F800DB: 2258h  
February 2003  
1/39  

M29F800DB55N6E 替代型号

型号 品牌 替代类型 描述 数据表
M29F800FB5AN6F2 MICRON

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Top/Bottom Boot Block, 5V, Parallel NOR Flash Memory
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