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M29F800AB70M3TR PDF预览

M29F800AB70M3TR

更新时间: 2024-01-26 16:06:24
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
21页 144K
描述
512KX16 FLASH 5V PROM, 70ns, PDSO44, 0.525 INCH, PLASTIC, SO-44

M29F800AB70M3TR 技术参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:0.525 INCH, PLASTIC, SO-44针数:44
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.14
最长访问时间:70 ns其他特性:BOTTOM BOOT BLOCK
备用内存宽度:8启动块:BOTTOM
JESD-30 代码:R-PDSO-G44长度:28.2 mm
内存密度:8388608 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
端子数量:44字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:512KX16封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
编程电压:5 V认证状态:Not Qualified
座面最大高度:2.62 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
类型:NOR TYPE宽度:13.3 mm
Base Number Matches:1

M29F800AB70M3TR 数据手册

 浏览型号M29F800AB70M3TR的Datasheet PDF文件第2页浏览型号M29F800AB70M3TR的Datasheet PDF文件第3页浏览型号M29F800AB70M3TR的Datasheet PDF文件第4页浏览型号M29F800AB70M3TR的Datasheet PDF文件第5页浏览型号M29F800AB70M3TR的Datasheet PDF文件第6页浏览型号M29F800AB70M3TR的Datasheet PDF文件第7页 
M29F800AT  
M29F800AB  
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)  
Single Supply Flash Memory  
PRELIMINARY DATA  
SINGLE 5V±10% SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 70ns  
PROGRAMMING TIME  
– 8µs per Byte/Word typical  
44  
19 MEMORY BLOCKS  
– 1 Boot Block (Top or Bottom Location)  
– 2 Parameter and 16 Main Blocks  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte/Word Program algorithm  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
– Ready/Busy Output Pin  
1
TSOP48 (N)  
12 x 20mm  
SO44 (M)  
Figure 1. Logic Diagram  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
TEMPORARY BLOCK UNPROTECTION  
V
CC  
MODE  
LOW POWER CONSUMPTION  
19  
15  
– Standby and Automatic Standby  
A0-A18  
DQ0-DQ14  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
W
DQ15A–1  
BYTE  
RB  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
M29F800AT  
M29F800AB  
E
G
RP  
– M29F800AT Device Code: 00ECh  
– M29F800AB Device Code: 0058h  
V
SS  
AI02198B  
January 2000  
1/21  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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