Datasheet > M29F400BT55MT3T

M29F400BT55MT3T

更新时间： 2024-11-06 04:53:51

品牌	Logo	应用领域
恒忆 - NUMONYX		可编程只读存储器光电二极管
页数	文件大小	规格书
40页	316K
描述
256KX16 FLASH 5V PROM, 55ns, PDSO44, 0.500 INCH, PLASTIC, SOP-44

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M29F400BT55MT3T 数据手册

M29F400BT

M29F400BB

4 Mbit (512Kb x8 or 256Kb x16, Boot Block)

single supply Flash memory

Feature summary

■ Single 5V±10% supply voltage for program,

erase and read operations

■ Access time: 45ns

■ Programming time

– 8µs per Byte/Word typical

TSOP48 (N)

12 x 20mm

■ 11 memory blocks

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 8 Main Blocks

■ Program/erase controller

– Embedded Byte/Word Program algorithm

– Embedded Multi-Block/Chip Erase

algorithm

– Status Register Polling and Toggle Bits

– Ready/Busy Output Pin

■ Erase Suspend and Resume modes

SO44 (MT)

– Read and Program another Block during

Erase Suspend

■ Unlock Bypass Program command

■ Electronic signature

– Faster Production/Batch Programming

– Manufacturer Code: 0020h

■ Temporary block unprotection mode

– Top Device Code M29F400BT: 00D5h

– Bottom Device Code M29F400BB: 00D6h

■ Low power consumption

– Standby and Automatic Standby

■ ECOPACK packages available

■ 100,000 program/erase cycles per block

■ 20-year data retention

– Defectivity below 1 ppm/year

July 2006

Rev 3

1/40

www.st.com

12 3 4 5 6 7...40

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