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M29F400BT45MT1E PDF预览

M29F400BT45MT1E

更新时间: 2024-11-06 04:29:55
品牌 Logo 应用领域
恒忆 - NUMONYX 可编程只读存储器光电二极管
页数 文件大小 规格书
40页 316K
描述
256KX16 FLASH 5V PROM, 45ns, PDSO44, 0.500 INCH, LEAD FREE, PLASTIC, SOP-44

M29F400BT45MT1E 数据手册

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M29F400BT  
M29F400BB  
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)  
single supply Flash memory  
Feature summary  
Single 5V±10% supply voltage for program,  
erase and read operations  
Access time: 45ns  
Programming time  
– 8µs per Byte/Word typical  
TSOP48 (N)  
12 x 20mm  
11 memory blocks  
– 1 Boot Block (Top or Bottom Location)  
– 2 Parameter and 8 Main Blocks  
Program/erase controller  
– Embedded Byte/Word Program algorithm  
– Embedded Multi-Block/Chip Erase  
algorithm  
44  
– Status Register Polling and Toggle Bits  
– Ready/Busy Output Pin  
1
Erase Suspend and Resume modes  
SO44 (MT)  
– Read and Program another Block during  
Erase Suspend  
Unlock Bypass Program command  
Electronic signature  
– Faster Production/Batch Programming  
– Manufacturer Code: 0020h  
Temporary block unprotection mode  
Top Device Code M29F400BT: 00D5h  
– Bottom Device Code M29F400BB: 00D6h  
Low power consumption  
– Standby and Automatic Standby  
®
ECOPACK packages available  
100,000 program/erase cycles per block  
20-year data retention  
– Defectivity below 1 ppm/year  
July 2006  
Rev 3  
1/40  
www.st.com  
1

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