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M29F400BB90M1T PDF预览

M29F400BB90M1T

更新时间: 2024-02-12 10:13:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
22页 201K
描述
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory

M29F400BB90M1T 技术参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP,针数:44
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.08
最长访问时间:70 ns其他特性:BOTTOM BOOT BLOCK
备用内存宽度:8启动块:BOTTOM
JESD-30 代码:R-PDSO-G44JESD-609代码:e0
长度:28.2 mm内存密度:4194304 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1端子数量:44
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256KX16
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):225
编程电压:5 V认证状态:Not Qualified
座面最大高度:2.62 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
类型:NOR TYPE宽度:13.3 mm
Base Number Matches:1

M29F400BB90M1T 数据手册

 浏览型号M29F400BB90M1T的Datasheet PDF文件第2页浏览型号M29F400BB90M1T的Datasheet PDF文件第3页浏览型号M29F400BB90M1T的Datasheet PDF文件第4页浏览型号M29F400BB90M1T的Datasheet PDF文件第5页浏览型号M29F400BB90M1T的Datasheet PDF文件第6页浏览型号M29F400BB90M1T的Datasheet PDF文件第7页 
M29F400BT  
M29F400BB  
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)  
Single Supply Flash Memory  
SINGLE 5V±10% SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 45ns  
PROGRAMMING TIME  
– 8µs per Byte/Word typical  
44  
11 MEMORY BLOCKS  
– 1 Boot Block (Top or Bottom Location)  
– 2 Parameter and 8 Main Blocks  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte/Word Program algorithm  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
– Ready/Busy Output Pin  
1
TSOP48 (N)  
12 x 20mm  
SO44 (M)  
Figure 1. Logic Diagram  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
UNLOCK BYPASS PROGRAM COMMAND  
V
CC  
– Faster Production/Batch Programming  
TEMPORARY BLOCK UNPROTECTION  
18  
15  
MODE  
A0-A17  
DQ0-DQ14  
LOW POWER CONSUMPTION  
– Standby and Automatic Standby  
W
E
DQ15A–1  
BYTE  
RB  
100,000 PROGRAM/ERASE CYCLES per  
M29F400BT  
M29F400BB  
BLOCK  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
G
RP  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
– Top Device Code M29F400BT: 00D5h  
– Bottom Device Code M29F400BB: 00D6h  
V
SS  
AI02904  
July 2000  
1/22  

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