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M29F400BB55M6F PDF预览

M29F400BB55M6F

更新时间: 2024-11-04 05:27:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
40页 320K
描述
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory

M29F400BB55M6F 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOIC包装说明:0.525 INCH, LEAD FREE, PLASTIC, SOP-44
针数:44Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.61最长访问时间:55 ns
其他特性:BOTTOM BOOT BLOCK备用内存宽度:8
启动块:BOTTOM命令用户界面:YES
数据轮询:YES耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G44JESD-609代码:e3/e4
长度:28.2 mm内存密度:4194304 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:1,2,1,7
端子数量:44字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX16封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP44,.63
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V编程电压:5 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:2.62 mm部门规模:16K,8K,32K,64K
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.02 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN/NICKEL PALLADIUM GOLD
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:YES类型:NOR TYPE
宽度:13.3 mmBase Number Matches:1

M29F400BB55M6F 数据手册

 浏览型号M29F400BB55M6F的Datasheet PDF文件第2页浏览型号M29F400BB55M6F的Datasheet PDF文件第3页浏览型号M29F400BB55M6F的Datasheet PDF文件第4页浏览型号M29F400BB55M6F的Datasheet PDF文件第5页浏览型号M29F400BB55M6F的Datasheet PDF文件第6页浏览型号M29F400BB55M6F的Datasheet PDF文件第7页 
M29F400BT  
M29F400BB  
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)  
single supply Flash memory  
Feature summary  
Single 5 V ± 10% supply voltage for program,  
erase and read operations  
Access time: 45 ns  
Programming time  
– 8 µs per Byte/Word typical  
TSOP48 (N)  
12 x 20mm  
11 memory blocks  
– 1 Boot Block (Top or Bottom Location)  
– 2 Parameter and 8 Main Blocks  
Program/erase controller  
– Embedded Byte/Word Program algorithm  
– Embedded Multi-Block/Chip Erase  
algorithm  
44  
– Status Register Polling and Toggle Bits  
– Ready/Busy Output Pin  
1
Erase Suspend and Resume modes  
SO44 (MT)  
– Read and Program another Block during  
Erase Suspend  
Unlock Bypass Program command  
Electronic signature  
– Faster Production/Batch Programming  
– Manufacturer Code: 0020h  
Temporary block unprotection mode  
Top Device Code M29F400BT: 00D5h  
– Bottom Device Code M29F400BB: 00D6h  
Low power consumption  
– Standby and Automatic Standby  
®
ECOPACK packages available  
100,000 program/erase cycles per block  
20-year data retention  
– Defectivity below 1 ppm/year  
December 2006  
Rev 4  
1/40  
www.st.com  
1

M29F400BB55M6F 替代型号

型号 品牌 替代类型 描述 数据表
M29F400BB55M3T STMICROELECTRONICS

功能相似

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory

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M29F400BB55M6T STMICROELECTRONICS

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4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory
M29F400BB-55M6T STMICROELECTRONICS

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4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory
M29F400BB55MT1 NUMONYX

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Flash, 256KX16, 55ns, PDSO44, 0.500 INCH, PLASTIC, SOP-44
M29F400BB55MT1E NUMONYX

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Flash, 256KX16, 55ns, PDSO44, 0.500 INCH, LEAD FREE, PLASTIC, SOP-44
M29F400BB55MT1F NUMONYX

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256KX16 FLASH 5V PROM, 55ns, PDSO44, 0.500 INCH, LEAD FREE, PLASTIC, SOP-44
M29F400BB55MT1T NUMONYX

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256KX16 FLASH 5V PROM, 55ns, PDSO44, 0.500 INCH, PLASTIC, SOP-44
M29F400BB55MT3 NUMONYX

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Flash, 256KX16, 55ns, PDSO44, 0.500 INCH, PLASTIC, SOP-44
M29F400BB55MT3E NUMONYX

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Flash, 256KX16, 55ns, PDSO44, 0.500 INCH, LEAD FREE, PLASTIC, SOP-44
M29F400BB55MT3T NUMONYX

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256KX16 FLASH 5V PROM, 55ns, PDSO44, 0.500 INCH, PLASTIC, SOP-44
M29F400BB55MT6 NUMONYX

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Flash, 256KX16, 55ns, PDSO44, 0.500 INCH, PLASTIC, SOP-44