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M29F400B-70M6TR PDF预览

M29F400B-70M6TR

更新时间： 2024-11-29 23:05:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
34页 232K
描述
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory

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M29F400B-70M6TR 数据手册

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M29F400T  
M29F400B  
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)  
Single Supply Flash Memory  
NOT FOR NEW DESIGN  
M29F400T and M29F400B are replaced  
respectively by the M29F400BT and  
M29F400BB  
5V±10% SUPPLY VOLTAGE for PROGRAM,  
ERASE and READOPERATIONS  
FAST ACCESS TIME: 55ns  
44  
FAST PROGRAMMING TIME  
– 10µs by Byte / 16µs by Word typical  
PROGRAM/ERASE CONTROLLER (P/E.C.)  
– Program Byte-by-Byte or Word-by-Word  
– Status Register bits and Ready/Busy Output  
MEMORY BLOCKS  
1
TSOP48 (N)  
12 x 20 mm  
SO44 (M)  
– Boot Block (Top or Bottom location)  
– Parameter and Main blocks  
BLOCK, MULTI-BLOCK and CHIP ERASE  
MULTI-BLOCK PROTECTION/TEMPORARY  
UNPROTECTION MODES  
ERASE SUSPEND and RESUME MODES  
Figure 1. Logic Diagram  
– Read and Program another Block during  
Erase Suspend  
LOW POWER CONSUMPTION  
– Stand-by and Automatic Stand-by  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
V
CC  
20 YEARS DATA RETENTION  
– Defectivity below 1ppm/year  
ELECTRONIC SIGNATURE  
18  
15  
A0-A17  
DQ0-DQ14  
– Manufacturer Code: 0020h  
– Device Code, M29F400T: 00D5h  
– Device Code, M29F400B: 00D6h  
W
E
DQ15A–1  
BYTE  
RB  
M29F400T  
M29F400B  
G
DESCRIPTION  
RP  
The M29F400 is a non-volatile memory that may  
be erased electrically at the block or chip level and  
programmed in-system on a Byte-by-Byte or Word-  
by-Word basis using only a single 5V VCC supply.  
For Program and Erase operations the necessary  
high voltages are generated internally. The device  
can also be programmed in standard program-  
mers.  
V
SS  
AI01726B  
The array matrix organisation allows each block to  
be erased and reprogrammed without affecting  
other blocks. Blocks can be protected against pro-  
November 1999  
1/34  
This is information on a productstil l in production but not recommendedfor new designs.  
1234567...34

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与M29F400B-70M6TR相关器件

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M29F400B-70N1R STMICROELECTRONICS

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 		4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory
M29F400B-70N1TR STMICROELECTRONICS

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 		4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory
M29F400B-70N3 STMICROELECTRONICS

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 		256KX16 FLASH 5V PROM, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
M29F400B-70N3R STMICROELECTRONICS

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 		4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory
M29F400B-70N3RTR STMICROELECTRONICS

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 		256KX16 FLASH 5V PROM, 70ns, PDSO48, 12 X 20 MM, PLASTIC, REVERSE, TSOP-48
M29F400B-70N3TR STMICROELECTRONICS

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 		4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory
M29F400B-70N6R STMICROELECTRONICS

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 		4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory
M29F400B-70N6RTR STMICROELECTRONICS

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 		256KX16 FLASH 5V PROM, 70ns, PDSO48, 12 X 20 MM, PLASTIC, REVERSE, TSOP-48
M29F400B-70N6TR STMICROELECTRONICS

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 		4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory

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