Datasheet > M29F200BT45N3E

M29F200BT45N3E

更新时间： 2024-12-01 03:59:19

品牌	Logo	应用领域
恒忆 - NUMONYX		可编程只读存储器光电二极管
页数	文件大小	规格书
41页	514K
描述
128KX16 FLASH 5V PROM, 45ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48

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M29F200BT45N3E 数据手册

M29F200BT

M29F200BB

2 Mbit (256Kb x8 or 128Kb x16, Boot Block)

Single Supply Flash Memory

Features

■ Single 5V±10% supply voltage for Program,

Erase and Read operations

■ Access time: 45, 50, 70, 90ns

■ Programming time

– 8µs per Byte/Word typical

TSOP48 (N)

12 x 20mm

■ 7 memory blocks

– 1 Boot Block (Top or Bottom location)

– 2 parameter and 4 main blocks

■ Program/Erase controller

– Embedded Byte/Word Program algorithm

– Embedded Multi-Block/Chip Erase

algorithm

– Status Register polling and toggle bits

– Ready/Busy output pin

■ Erase Suspend and Resume modes

– Read and Program another block during

Erase Suspend

SO44 (M)

■ Unlock Bypass Program command

– Faster Production/Batch Programming

■ Temporary Block Unprotection mode

■ Low power consumption

– Standby and Automatic Standby

■ 100,000 Program/Erase cycles per block

■ 20 years data retention

– Defectivity below 1 ppm/year

■ Electronic Signature

– Manufacturer code: 0020h

– Top Device code M29F200BT: 00D3h

– Bottom Device code: M29F200BB: 00D4h

■ ECOPACK packages available

March 2007

Rev 5

1/39

www.st.com

12 3 4 5 6 7...41

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