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M29F200BT45N1F PDF预览

M29F200BT45N1F

更新时间: 2024-11-02 13:10:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
22页 147K
描述
128KX16 FLASH 5V PROM, 45ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48

M29F200BT45N1F 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:TSOP包装说明:12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
针数:48Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.2Is Samacsys:N
最长访问时间:45 ns其他特性:TOP BOOT BLOCK
备用内存宽度:8启动块:TOP
命令用户界面:YES数据轮询:YES
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-G48
JESD-609代码:e3/e6长度:18.4 mm
内存密度:2097152 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:1,2,1,3端子数量:48
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:128KX16
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP48,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:5 V
编程电压:5 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:16K,8K,32K,64K最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:TIN/TIN BISMUTH端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40切换位:YES
类型:NOR TYPE宽度:12 mm
Base Number Matches:1

M29F200BT45N1F 数据手册

 浏览型号M29F200BT45N1F的Datasheet PDF文件第2页浏览型号M29F200BT45N1F的Datasheet PDF文件第3页浏览型号M29F200BT45N1F的Datasheet PDF文件第4页浏览型号M29F200BT45N1F的Datasheet PDF文件第5页浏览型号M29F200BT45N1F的Datasheet PDF文件第6页浏览型号M29F200BT45N1F的Datasheet PDF文件第7页 
M29F200BT  
M29F200BB  
2 Mbit (256Kb x8 or 128Kb x16, Boot Block)  
Single Supply Flash Memory  
PRELIMINARY DATA  
SINGLE 5V±10% SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 45ns  
PROGRAMMING TIME  
– 8µs per Byte/Word typical  
44  
7 MEMORY BLOCKS  
– 1 Boot Block (Top or Bottom Location)  
– 2 Parameter and 4 Main Blocks  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte/Word Program algorithm  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
– Ready/Busy Output Pin  
1
TSOP48 (N)  
12 x 20mm  
SO44 (M)  
Figure 1. Logic Diagram  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
UNLOCK BYPASS PROGRAM COMMAND  
V
CC  
– Faster Production/Batch Programming  
TEMPORARY BLOCK UNPROTECTION  
17  
15  
MODE  
A0-A16  
DQ0-DQ14  
LOW POWER CONSUMPTION  
– Standby and Automatic Standby  
W
DQ15A–1  
BYTE  
RB  
100,000 PROGRAM/ERASE CYCLES per  
M29F200BT  
M29F200BB  
E
G
BLOCK  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
RP  
– M29F200BT Device Code: 00D3h  
– M29F200BB Device Code: 00D4h  
V
SS  
AI02912  
October 1999  
1/22  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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