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M29F200BB90N6F PDF预览

M29F200BB90N6F

更新时间: 2024-11-30 06:50:23
品牌 Logo 应用领域
恒忆 - NUMONYX ISM频段光电二极管内存集成电路
页数 文件大小 规格书
41页 514K
描述
Flash, 128KX16, 90ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48

M29F200BB90N6F 技术参数

生命周期:Obsolete零件包装代码:TSOP
包装说明:12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48针数:48
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.15
最长访问时间:90 ns备用内存宽度:8
启动块:BOTTOMJESD-30 代码:R-PDSO-G48
JESD-609代码:e3/e6长度:18.4 mm
内存密度:2097152 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
端子数量:48字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX16封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):260编程电压:5 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN/TIN BISMUTH端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40类型:NOR TYPE
宽度:12 mmBase Number Matches:1

M29F200BB90N6F 数据手册

 浏览型号M29F200BB90N6F的Datasheet PDF文件第2页浏览型号M29F200BB90N6F的Datasheet PDF文件第3页浏览型号M29F200BB90N6F的Datasheet PDF文件第4页浏览型号M29F200BB90N6F的Datasheet PDF文件第5页浏览型号M29F200BB90N6F的Datasheet PDF文件第6页浏览型号M29F200BB90N6F的Datasheet PDF文件第7页 
M29F200BT  
M29F200BB  
2 Mbit (256Kb x8 or 128Kb x16, Boot Block)  
Single Supply Flash Memory  
Features  
Single 5V±10% supply voltage for Program,  
Erase and Read operations  
Access time: 45, 50, 70, 90ns  
Programming time  
– 8µs per Byte/Word typical  
TSOP48 (N)  
12 x 20mm  
7 memory blocks  
– 1 Boot Block (Top or Bottom location)  
– 2 parameter and 4 main blocks  
Program/Erase controller  
– Embedded Byte/Word Program algorithm  
– Embedded Multi-Block/Chip Erase  
algorithm  
44  
– Status Register polling and toggle bits  
– Ready/Busy output pin  
Erase Suspend and Resume modes  
1
– Read and Program another block during  
Erase Suspend  
SO44 (M)  
Unlock Bypass Program command  
– Faster Production/Batch Programming  
Temporary Block Unprotection mode  
Low power consumption  
– Standby and Automatic Standby  
100,000 Program/Erase cycles per block  
20 years data retention  
– Defectivity below 1 ppm/year  
Electronic Signature  
– Manufacturer code: 0020h  
Top Device code M29F200BT: 00D3h  
– Bottom Device code: M29F200BB: 00D4h  
®
ECOPACK packages available  
March 2007  
Rev 5  
1/39  
www.st.com  
1

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