5秒后页面跳转
M29F200BB70N6T PDF预览

M29F200BB70N6T

更新时间: 2024-11-09 22:55:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
22页 147K
描述
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

M29F200BB70N6T 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:TSOP包装说明:12 X 20 MM, PLASTIC, TSOP-48
针数:48Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.14Is Samacsys:N
最长访问时间:70 ns其他特性:BOTTOM BOOT BLOCK
备用内存宽度:8启动块:BOTTOM
命令用户界面:YES数据轮询:YES
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-G48
JESD-609代码:e0长度:18.4 mm
内存密度:2097152 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:1,2,1,3端子数量:48
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX16
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP48,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
编程电压:5 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:16K,8K,32K,64K最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN LEAD端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE宽度:12 mm
Base Number Matches:1

M29F200BB70N6T 数据手册

 浏览型号M29F200BB70N6T的Datasheet PDF文件第2页浏览型号M29F200BB70N6T的Datasheet PDF文件第3页浏览型号M29F200BB70N6T的Datasheet PDF文件第4页浏览型号M29F200BB70N6T的Datasheet PDF文件第5页浏览型号M29F200BB70N6T的Datasheet PDF文件第6页浏览型号M29F200BB70N6T的Datasheet PDF文件第7页 
M29F200BT  
M29F200BB  
2 Mbit (256Kb x8 or 128Kb x16, Boot Block)  
Single Supply Flash Memory  
PRELIMINARY DATA  
SINGLE 5V±10% SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 45ns  
PROGRAMMING TIME  
– 8µs per Byte/Word typical  
44  
7 MEMORY BLOCKS  
– 1 Boot Block (Top or Bottom Location)  
– 2 Parameter and 4 Main Blocks  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte/Word Program algorithm  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
– Ready/Busy Output Pin  
1
TSOP48 (N)  
12 x 20mm  
SO44 (M)  
Figure 1. Logic Diagram  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
UNLOCK BYPASS PROGRAM COMMAND  
V
CC  
– Faster Production/Batch Programming  
TEMPORARY BLOCK UNPROTECTION  
17  
15  
MODE  
A0-A16  
DQ0-DQ14  
LOW POWER CONSUMPTION  
– Standby and Automatic Standby  
W
DQ15A–1  
BYTE  
RB  
100,000 PROGRAM/ERASE CYCLES per  
M29F200BT  
M29F200BB  
E
G
BLOCK  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
RP  
– M29F200BT Device Code: 00D3h  
– M29F200BB Device Code: 00D4h  
V
SS  
AI02912  
October 1999  
1/22  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

与M29F200BB70N6T相关器件

型号 品牌 获取价格 描述 数据表
M29F200BB90M1 NUMONYX

获取价格

Flash, 128KX16, 90ns, PDSO44, 0.525 INCH, PLASTIC, SOP-44
M29F200BB90M1E STMICROELECTRONICS

获取价格

128KX16 FLASH 5V PROM, 90ns, PDSO44, 0.525 INCH, LEAD FREE, PLASTIC, SOP-44
M29F200BB90M1F NUMONYX

获取价格

Flash, 128KX16, 90ns, PDSO44, 0.525 INCH, LEAD FREE, PLASTIC, SOP-44
M29F200BB90M1T STMICROELECTRONICS

获取价格

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory
M29F200BB90M3 NUMONYX

获取价格

Flash, 128KX16, 90ns, PDSO44, 0.525 INCH, PLASTIC, SOP-44
M29F200BB90M3F NUMONYX

获取价格

Flash, 128KX16, 90ns, PDSO44, 0.525 INCH, LEAD FREE, PLASTIC, SOP-44
M29F200BB90M3T STMICROELECTRONICS

获取价格

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory
M29F200BB90M6 NUMONYX

获取价格

128KX16 FLASH 5V PROM, 90ns, PDSO44, 0.525 INCH, PLASTIC, SOP-44
M29F200BB90M6E NUMONYX

获取价格

128KX16 FLASH 5V PROM, 90ns, PDSO44, 0.525 INCH, LEAD FREE, PLASTIC, SOP-44
M29F200BB90M6F NUMONYX

获取价格

128KX16 FLASH 5V PROM, 90ns, PDSO44, 0.525 INCH, LEAD FREE, PLASTIC, SOP-44