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M29F200BB70N3T PDF预览

M29F200BB70N3T

更新时间: 2024-02-09 01:44:50
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
22页 147K
描述
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

M29F200BB70N3T 技术参数

生命周期:Obsolete零件包装代码:TSOP
包装说明:12 X 20 MM, PLASTIC, TSOP-48针数:48
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.15
最长访问时间:70 ns备用内存宽度:8
启动块:BOTTOMJESD-30 代码:R-PDSO-G48
JESD-609代码:e0长度:18.4 mm
内存密度:2097152 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
端子数量:48字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:128KX16封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):240编程电压:5 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:TIN LEAD端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30类型:NOR TYPE
宽度:12 mmBase Number Matches:1

M29F200BB70N3T 数据手册

 浏览型号M29F200BB70N3T的Datasheet PDF文件第2页浏览型号M29F200BB70N3T的Datasheet PDF文件第3页浏览型号M29F200BB70N3T的Datasheet PDF文件第4页浏览型号M29F200BB70N3T的Datasheet PDF文件第5页浏览型号M29F200BB70N3T的Datasheet PDF文件第6页浏览型号M29F200BB70N3T的Datasheet PDF文件第7页 
M29F200BT  
M29F200BB  
2 Mbit (256Kb x8 or 128Kb x16, Boot Block)  
Single Supply Flash Memory  
PRELIMINARY DATA  
SINGLE 5V±10% SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 45ns  
PROGRAMMING TIME  
– 8µs per Byte/Word typical  
44  
7 MEMORY BLOCKS  
– 1 Boot Block (Top or Bottom Location)  
– 2 Parameter and 4 Main Blocks  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte/Word Program algorithm  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
– Ready/Busy Output Pin  
1
TSOP48 (N)  
12 x 20mm  
SO44 (M)  
Figure 1. Logic Diagram  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
UNLOCK BYPASS PROGRAM COMMAND  
V
CC  
– Faster Production/Batch Programming  
TEMPORARY BLOCK UNPROTECTION  
17  
15  
MODE  
A0-A16  
DQ0-DQ14  
LOW POWER CONSUMPTION  
– Standby and Automatic Standby  
W
DQ15A–1  
BYTE  
RB  
100,000 PROGRAM/ERASE CYCLES per  
M29F200BT  
M29F200BB  
E
G
BLOCK  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
RP  
– M29F200BT Device Code: 00D3h  
– M29F200BB Device Code: 00D4h  
V
SS  
AI02912  
October 1999  
1/22  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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