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M29F200BB70N1E PDF预览

M29F200BB70N1E

更新时间: 2024-11-11 09:55:39
品牌 Logo 应用领域
恒忆 - NUMONYX 光电二极管
页数 文件大小 规格书
41页 514K
描述
Flash, 128KX16, 70ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48

M29F200BB70N1E 数据手册

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M29F200BT  
M29F200BB  
2 Mbit (256Kb x8 or 128Kb x16, Boot Block)  
Single Supply Flash Memory  
Features  
Single 5V±10% supply voltage for Program,  
Erase and Read operations  
Access time: 45, 50, 70, 90ns  
Programming time  
– 8µs per Byte/Word typical  
TSOP48 (N)  
12 x 20mm  
7 memory blocks  
– 1 Boot Block (Top or Bottom location)  
– 2 parameter and 4 main blocks  
Program/Erase controller  
– Embedded Byte/Word Program algorithm  
– Embedded Multi-Block/Chip Erase  
algorithm  
44  
– Status Register polling and toggle bits  
– Ready/Busy output pin  
Erase Suspend and Resume modes  
1
– Read and Program another block during  
Erase Suspend  
SO44 (M)  
Unlock Bypass Program command  
– Faster Production/Batch Programming  
Temporary Block Unprotection mode  
Low power consumption  
– Standby and Automatic Standby  
100,000 Program/Erase cycles per block  
20 years data retention  
– Defectivity below 1 ppm/year  
Electronic Signature  
– Manufacturer code: 0020h  
Top Device code M29F200BT: 00D3h  
– Bottom Device code: M29F200BB: 00D4h  
®
ECOPACK packages available  
March 2007  
Rev 5  
1/39  
www.st.com  
1

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